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Proton Induced Single Event Upset in 6 T SOI SRAMs

By: Liu, M.S.; Liu, H.Y.; Hughes, H.L.;

2006 / IEEE

Description

This item was taken from the IEEE Periodical ' Proton Induced Single Event Upset in 6 T SOI SRAMs ' This paper presents a method to estimate the saturated proton upset cross section for 6 T SOI SRAM cells from layout and technology parameters. The calculated proton upset cross section based on this method is in good agreement with test results for our 6 T SOI SRAM cells processed using 0.15 and 0.35 mum technologies