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An Investigation of Dose Rate and Source Dependent Effects in 200 GHz SiGe HBTs

By: Sutton, A.K.; Fleetwood, D.M.; Bongim Jun; Enhai Zhao; Bellini, M.; Pellish, J.; Diestelhorst, R.M.; Carts, M.A.; Phan, A.; Ladbury, R.; Cressler, J.D.; Marshall, Paul.W.; Marshall, C.J.; Reed, R.A.; Schrimpf, R.D.; Prakash, A.P.G.;

2006 / IEEE


This item was taken from the IEEE Periodical ' An Investigation of Dose Rate and Source Dependent Effects in 200 GHz SiGe HBTs ' We present an investigation of the observed variations in the total dose tolerance of the emitter-base spacer and shallow trench isolation oxides in a commercial 200 GHz SiGe HBT technology. Proton, gamma, and X-ray irradiations at varying dose rates are found to produce drastically different degradation signatures at the various oxide interfaces. Extraction and analysis of the radiation-induced excess base current, as well as low-frequency noise, are used to probe the underlying physical mechanisms. Two-dimensional calibrated device simulations are employed to correlate the observed results to the spatial distributions of carrier recombination in forward- and inverse-mode operation for both pre- and post-irradiation levels. Possible explanations of our observations are offered and the implications for hardness assurance testing are discussed