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Hybrid-orientation technology (HOT): opportunities and challenges
By: Min Yang; Meikei Ieong; Fischetti, M.V.; Burns, L.E.; Ott, J.A.; Chan, K.K.; Chan, V.W.C.; Chou, A.I.; Stathis, J.H.; Fried, D.M.; Shi, L.; Gusev, E.;
2006 / IEEE
This item was taken from the IEEE Periodical ' Hybrid-orientation technology (HOT): opportunities and challenges ' At the onset of innovative device structures intended to extend the roadmap for silicon CMOS, many techniques have been investigated to improve carrier mobility in silicon MOSFETs. A novel planar silicon CMOS structure, seeking optimized surface orientation, and hence carrier mobilities for both nFETs and pFETs, emerged. Hybrid-orientation technology provides nFETs on (100) surface orientation and pFETs on  surface orientation through wafer bonding and silicon selective epitaxy. The fabrication processes and device characteristics are reviewed in this paper.
Silicon Selective Epitaxy
Charge Carrier Mobility
Silicon Cmos Structure
Innovative Device Structures
Engineered Materials, Dielectrics And Plasmas
Components, Circuits, Devices And Systems