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Early lethal SEGR failures of VDMOSFETs considering nonuniformity in the rad-hard device distribution

By: Wheatley, T.H.; Titus, J.L.; Wheatley, C.F.;

2001 / IEEE

Description

This item was taken from the IEEE Periodical ' Early lethal SEGR failures of VDMOSFETs considering nonuniformity in the rad-hard device distribution ' In 1999, Titus et al. studied single-event gate rupture failures of vertical MOSFETs for many parameters where the MOSFET universe was assumed to consist of homogeneous devices. A non-homogeneous universe is now considered. Time-to-failure is studied using Monte Carlo methods. Boundaries are ascribed applying the empirical equation presented by Titus et al.