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An improved stripe-cell SEGR hardened power MOSFET technology
2001 / IEEE
This item was taken from the IEEE Periodical ' An improved stripe-cell SEGR hardened power MOSFET technology ' A new single-event gate rupture radiation-hardened power MOSFET is reported. It is based upon a well-established radiation-hardened technology described in 1996. The hexagonal cells used in prior work are replaced with a stripe-cell structure producing demonstrated performance improvements.
Single-event Gate Rupture
Termination Of Employment
Radiation Hardening (electronics)
Space Vehicle Electronics