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Low-threshold InGaAsP ring lasers fabricated using bi-level dry etching
2000 / IEEE
This item was taken from the IEEE Periodical ' Low-threshold InGaAsP ring lasers fabricated using bi-level dry etching ' We report a novel bi-level etching technique that permits the use of standard photolithography for coupling to deeply etched ring resonator structures. The technique is employed to demonstrate InGaAsP laterally coupled racetrack ring resonators laser with record low threshold currents of 66 mA. The racetrack laser have curved sections of 150-/spl mu/m radius with negligible bending loss. The lasers operate continuous-wave single mode up to nearly twice threshold with a 26-dB side-mode-suppression ratio. Bi-level etching is of interest for fabrication of mesoscopic or microcavity photonic resonator structures without relying on submicrometer processing.
Engineered Materials, Dielectrics And Plasmas
Laser Cavity Resonators
Low-threshold Ring Lasers
Ingaasp Ring Lasers
Bi-level Dry Etching
Bi-level Etching Technique
Ingaasp Laterally Coupled Racetrack Ring Resonator Laser
Low Threshold Currents
Continuous-wave Single Mode Laser
Mesoscopic Photonic Resonator Structures
Microcavity Photonic Resonator Structures
Optical Ring Resonators
Optical Device Fabrication
Deeply Etched Ring Resonator Structures
Photonics And Electrooptics