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11.5-W CW 1.83-�m diode laser array
By: Khalfin, V.; Menna, R.; Maiorov, M.; Connolly, J.; Garbuzov, D.; Matarese, R.; Milgazo, H.;
1999 / IEEE
Description
This item was taken from the IEEE Periodical ' 11.5-W CW 1.83-�m diode laser array ' We demonstrate high-power operation of both individual broad-waveguide separate-confinement-heterostructure quantum-well InGaAsP-InP laser diodes and 1-cm-wide arrays emitting at 1.83 /spl mu/m. Despite strong dependence of threshold current density and diode efficiency on operating temperature, a continuous-wave output power of 2.1 W has been obtained for 100-/spl mu/m-aperture lasers with 2-mm-long cavities. An output power of 11.5 W was reached for ten element 1-cm-wide array at a heatsink temperature of 16/spl deg/C.
Related Topics
Laser Transitions
Semiconductor Laser Arrays
Laser Cavity Resonators
Quantum Well Lasers
Waveguide Lasers
Ingaasp-inp
Cw 1.83-/spl Mu/m Diode Laser Array
High-power Operation
Broad-waveguide Separate-confinement-heterostructure Quantum-well Ingaasp-inp Laser Diodes
Diode Efficiency
Operating Temperature
Continuous-wave Output Power
Long Cavities
Aperture Lasers
Output Power
Heatsink Temperature
1.83 Mum
11.5 W
1 Cm
2.1 W
2 Mm
100 Mum
16 C
Diode Lasers
Optical Arrays
Semiconductor Laser Arrays
Pulse Measurements
Power Generation
Temperature Dependence
Power Measurement
Power Lasers
Copper
Current Measurement
Iii-v Semiconductors
Gallium Compounds
Gallium Arsenide
Indium Compounds
Heat Sinks
Photonics And Electrooptics
Engineered Materials, Dielectrics And Plasmas
Engineering
Threshold Current Density
