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Comparative SEU sensitivities to relativistic heavy ions
1998 / IEEE
This item was taken from the IEEE Periodical ' Comparative SEU sensitivities to relativistic heavy ions ' SEU sensitivity of microcircuits to relativistic heavy ions is compared to that measured with low energy ions of comparable LET values. Multiple junction charge collection in a complex circuit seems to mask the effect of varying charge generations due to different ion track structures. Heavy ions at sub-relativistic speeds may generate nuclear fragments, sometimes resulting in SEUs.
Relativistic Heavy Ion Irradiation
Multiple Junction Charge Collection
Random Access Memory
Single Event Upset
Nuclear Power Generation
Ion Beam Effects
Integrated Circuit Testing