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Kink-free characteristics of AlSb/InAs high electron mobility transistors with planar Si doping beneath the channel
By: Zhao, Y.; Wang, W.I.; Jurkovic, M.J.;
1998 / IEEE
This item was taken from the IEEE Periodical ' Kink-free characteristics of AlSb/InAs high electron mobility transistors with planar Si doping beneath the channel ' AlSb/InAs n-channel inverted-structure high electron mobility transistors (i-HEMT's) are realized by incorporating a Si doping sheet into a thin InAs layer that is embedded within the lower AlSb barrier. i-HEMT's with a 1 /spl mu/m /spl times/25 /spl mu/m gate size exhibit kink-free operation at room temperature with high drain current, high extrinsic transconductance, and low gate leakage. Results indicate potential for use in high-speed applications.
High Electron Mobility Transistors
Alsb/inas N-channel Inverted-structure High Electron Mobility Transistors
Planar Si Doping
Si Doping Sheet
Thin Inas Layer
High Drain Current
Molecular Beam Epitaxial Growth
Two-dimensional Electron Gas
Engineered Materials, Dielectrics And Plasmas
Components, Circuits, Devices And Systems