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Monolithic integration of an InGaAsP-InP MQW laser/waveguide using a twin-guide structure with a mode selection layer

By: Studenkov, P.; Gokhale, M.R.; Xu, L.; Forrest, S.R.; Garbuzov, D.; Chao, C.-P.; Dries, J.C.;

1997 / IEEE

Description

This item was taken from the IEEE Periodical ' Monolithic integration of an InGaAsP-InP MQW laser/waveguide using a twin-guide structure with a mode selection layer ' We demonstrate a monolithically integrated 1.55-/spl mu/m wavelength InGaAsP-InP multiple-quantum-well (MQW) laser with a passive Y-branch waveguide in a vertical twin-waveguide structure. To reduce the sensitivity of the device performance characteristics to laser cavity length and variations in the layer structure, we introduce an In/sub 0.53/Ga/sub 0.47/As absorption, or ""loss"" layer. This layer eliminates the propagation of the even mode, while having minimal effect on the odd mode. The threshold current densities and differential efficiencies of the devices are unaffected by the loss layer. A record high coupling efficiency of 45% from the laser to the external passive waveguide is obtained.