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Guidelines for designing BJT amplifiers with low 1/f AM and PM noise
1997 / IEEE
This item was taken from the IEEE Periodical ' Guidelines for designing BJT amplifiers with low 1/f AM and PM noise ' In this paper we discuss guidelines for designing linear bipolar junction transistor amplifiers with low 1/f amplitude modulation (AM) and phase modulation (PM) noise. These guidelines are derived from a new theory that relates AM and PM noise to transconductance fluctuations, junction capacitance fluctuations, and circuit architecture. We analyze the noise equations of each process for a common emitter (CE) amplifier and use the results to suggest amplifier designs that minimize the 1/f noise while providing other required attributes such as high gain. Although we use a CE amplifier as an example, the procedure applies to other configurations as well. Experimental noise results for several amplifier configurations are presented.
Bipolar Transistor Circuits
Nonlinear Network Synthesis
Linear Bjt Amplifier Design
Low 1/f Am Noise
Low 1/f Pm Noise
Linear Bipolar Junction Transistor Amplifiers
Amplitude Modulation Noise
Junction Capacitance Fluctuations
Common Emitter Amplifier
1/f Noise Minimization
Fields, Waves And Electromagnetics
Phase Modulation Noise