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Optoelectronic InP-InGaAs smart pixels for optical interconnections and computing

By: Forrest, S.R.; Gokhale, M.R.; Dries, J.C.; Dong-Su Kim;

1997 / IEEE

Description

This item was taken from the IEEE Periodical ' Optoelectronic InP-InGaAs smart pixels for optical interconnections and computing ' We describe InP-InGaAs optoelectronic smart pixels for applications in optical interconnection and computing. These circuits consist of monolithically integrated p-i-n photodiodes, heterojunction bipolar transistor (HBT) receivers and transmitters, and surface-bonded folded-cavity surface-emitting lasers (FCSEL's). Design, fabrication, and performance of two different circuits: a high-sensitivity pixel, and a high-bandwidth pixel with logic functions are discussed. We achieve a minimum switching energy of 6 fJ, a maximum pixel bandwidth of 800 MHz, and an optoelectronic gain of 3. To our knowledge, these are the best overall performance characteristics of any optoelectronic smart pixel technology and are competitive or superior to that achieved using all-electronic interconnects.