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Measurement of a cross-section for single-event gate rupture in power MOSFETs
By: Mouret, I.; Galloway, K.F.; Schrimpf, R.D.; Calvet, M.-C.; LaBel, K.A.; Wheatley, C.F.; Titus, J.L.; Allenspach, M.; Calvel, P.;
1996 / IEEE
This item was taken from the IEEE Periodical ' Measurement of a cross-section for single-event gate rupture in power MOSFETs ' The heavy-ion fluence required to induce Single-Event Gate Rupture (SEGR) in power MOSFETs is measured as a function of the drain bias, V/sub DS/, and as a function of the gate bias, V/sub GS/. These experiments reveal the abrupt nature of the SEGR-voltage threshold. In addition, the concepts of cross-section, threshold, and saturation in the SEGR phenomenon are introduced. This experimental technique provides a convenient method to quantify heavy-ion effects in power MOSFETs.
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