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A physical interpretation for the single-event-gate-rupture cross-section of n-channel power MOSFETs

By: Galloway, K.F.; Johnson, G.H.; Dachs, C.; Allenspach, M.; Wheatley, C.F.; Titus, J.L.; Schrimpf, R.D.;

1996 / IEEE

Description

This item was taken from the IEEE Periodical ' A physical interpretation for the single-event-gate-rupture cross-section of n-channel power MOSFETs ' The single-event-gate-rupture cross-section is measured as a function of drain-source and gate-source bias for some n-channel power MOSFETs. The experimental techniques are explained, and the results are interpreted with the help of two-dimensional computer modeling.