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SEGR response of a radiation-hardened power MOSFET technology

By: Burton, D.I.; Titus, J.L.; Wheatley, C.F.; Carley, D.R.;

1996 / IEEE

Description

This item was taken from the IEEE Periodical ' SEGR response of a radiation-hardened power MOSFET technology ' SEGR response curves are presented for eighteen different device types of radiation-hardened power MOSFETs. Comparisons are made to demonstrate the technology's insensitivity to die size, rated blocking voltage, channel conductivity, and temperature. From this data, SEGR cross-sectional area curves are inferred.