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Radiation-induced surface leakage currents in silicon microstrip detectors

By: Kim, P.C.; Hopman, P.I.; Alexander, J.P.; Foland, A.D.; Ward, C.W.;

1996 / IEEE

Description

This item was taken from the IEEE Periodical ' Radiation-induced surface leakage currents in silicon microstrip detectors ' After exposure to X-rays and UV light, we have observed induced leakage currents in silicon microstrip detectors designed for CLEO III. UV measurements have shown that the damage is confined to the Si-SiO/sub 2/ interface. The damage is manifested only as a leakage current without additional 1/f noise or significant changes to detector parameters. The damage rate is measured to be 5/spl plusmn/1 nA/cm/sup 2//kRad for 20 keV X-rays.