Use this resource - and many more! - in your textbook!
AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.
Experimental studies of single-event gate rupture and burnout in vertical power MOSFETs
By: Titus, J.L.; Wheatley, C.F.;
1996 / IEEE
This item was taken from the IEEE Periodical ' Experimental studies of single-event gate rupture and burnout in vertical power MOSFETs ' Numerous studies have revealed that vertical power MOSFETs are susceptible to single-event burnout (SEB) and single-event gate rupture (SEGR), resulting in degraded performance or even catastrophic failure when operated in a cosmic-ray environment like space. This paper summarizes many of those experimental studies and examines the problems, test methodologies, and experimental results. Previously unavailable information on SEGR is also provided.
Space Vehicle Electronics
Cosmic Ray Interactions
Semiconductor Device Testing
Ion Beam Effects
Single-event Gate Rupture
Power Semiconductor Switches
Insulated Gate Bipolar Transistors
Pulse Power Systems
Vertical Power Mosfet