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Experimental studies of single-event gate rupture and burnout in vertical power MOSFETs

By: Titus, J.L.; Wheatley, C.F.;

1996 / IEEE

Description

This item was taken from the IEEE Periodical ' Experimental studies of single-event gate rupture and burnout in vertical power MOSFETs ' Numerous studies have revealed that vertical power MOSFETs are susceptible to single-event burnout (SEB) and single-event gate rupture (SEGR), resulting in degraded performance or even catastrophic failure when operated in a cosmic-ray environment like space. This paper summarizes many of those experimental studies and examines the problems, test methodologies, and experimental results. Previously unavailable information on SEGR is also provided.