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n/sup +/-SnO/sub 2//a-SiC:H/metal thin-film photodiodes with voltage-controlled spectral sensitivity
1995 / IEEE
This item was taken from the IEEE Periodical ' n/sup +/-SnO/sub 2//a-SiC:H/metal thin-film photodiodes with voltage-controlled spectral sensitivity ' n/sup +/-SnO/sub 2//a-SiC/metal photodiodes with voltage-controlled photosensitivity have been realized by using both carbon-rich and silicon-rich a-SiC alloys. Carbon-rich devices show a response peak located at 530 nm independent of the applied voltage, which in turn only affects the peak height. At variance, in silicon-rich structures the response peak is located at 480, 510, and 570 nm when the applied voltage is -4, 0, and +4 V, respectively, with corresponding quantum yield values of 17, 3, and 25%. For explaining the observed behavior we present a simple model of n/sup +/-SnO/sub 2//a-SiC/metal diodes, which takes into account light-induced modulation of n/sup +/-SnO/sub 2//a-SiC barrier height, primary photocurrent generation and photoconductivity effects.
Semiconductor Device Models
N/sup +/-sno/sub 2//a-sic:h/metal Thin-film Photodiodes
Voltage-controlled Spectral Sensitivity
C-rich A-sic Alloys
Si-rich A-sic Alloys
Quantum Yield Values
Primary Photocurrent Generation
480 To 570 Nm
-4 To 4 V
Engineered Materials, Dielectrics And Plasmas
Components, Circuits, Devices And Systems