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High power single mode operation of AlGaInP visible laser diode with lateral leaky waveguide structure

By: Karniyama, S.; Kidoguchi, I.; Ohnaka, K.; Ban, Y.; Mannoh, M.; Adachi, H.;

1994 / IEEE

Description

This item was taken from the IEEE Periodical ' High power single mode operation of AlGaInP visible laser diode with lateral leaky waveguide structure ' AlGaInP visible laser diode with lateral leaky waveguide structure employing 0.025 of negative refractive index step have been fabricated. In comparison to conventional loss guided structure, lateral leaky waveguide structure indicated stable fundamental mode operation. The output power at kink for lateral leaky waveguide laser was around 1.5 times higher than loss guided structure for same stripe widths. The stability was attributed to large mode discrimination against higher order mode. The lateral leaky waveguide laser with 560 /spl mu/m cavity length employing the antireflection (5%)/high reflection (82%) showed 66 mW of output power with no kinks at 25/spl deg/C.<>