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Microwave performance of low-power ion-implanted 0.25-micron gate GaAs MESFET for low-cost MMIC's applications

By: Middleton, J.; Apostolakis, P.J.; Lepore, A.N.; Feng, M.; Barlage, D.; Scherrer, D.; Kruse, J.;

1993 / IEEE

Description

This item was taken from the IEEE Periodical ' Microwave performance of low-power ion-implanted 0.25-micron gate GaAs MESFET for low-cost MMIC's applications ' Low-power microwave performance of an enhancement mode) (E-mode ion-implanted GaAs MESFET is reported. The 0.25- mu m*100- mu m E-MESFET has a threshold voltage of V/sub th/=0.0 V. At 1.0-mW operation of power with a bias condition of V/sub ds/=0.5 V and I/sub ds/-2 mA, a noise figure of 0.85 dB with an associated gain of 15 dB was measured at 4 GHz. These results demonstrate that the GaAs E-MESFET is an excellent choice for low-power personal communication applications.<>