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1.0-mA-threshold uncoated lasers by impurity-induced disordering

By: Law, K.-K.; Bowen, T.; Zou, W.X.; Merz, J.L.; Young, D.B.;

1993 / IEEE


This item was taken from the IEEE Periodical ' 1.0-mA-threshold uncoated lasers by impurity-induced disordering ' Low-threshold lasers fabricated by impurity-induced disordering using InGaAs/GaAs/AlGaAs double-quantum-well material are discussed. Threshold current as low as 1.0 mA under room-temperature continuous-wave operation was obtained for uncoated lasers. Experimental data show that this low threshold is mainly due to the optimizations for both the quantum well (QW) design and the device structures.<>