Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

1.0-mA-threshold uncoated lasers by impurity-induced disordering

By: Law, K.-K.; Bowen, T.; Zou, W.X.; Merz, J.L.; Young, D.B.;

1993 / IEEE

Description

This item was taken from the IEEE Periodical ' 1.0-mA-threshold uncoated lasers by impurity-induced disordering ' Low-threshold lasers fabricated by impurity-induced disordering using InGaAs/GaAs/AlGaAs double-quantum-well material are discussed. Threshold current as low as 1.0 mA under room-temperature continuous-wave operation was obtained for uncoated lasers. Experimental data show that this low threshold is mainly due to the optimizations for both the quantum well (QW) design and the device structures.<>