Use this resource - and many more! - in your textbook!
AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.
Drift leakage current in AlGaInP quantum-well lasers
1993 / IEEE
This item was taken from the IEEE Periodical ' Drift leakage current in AlGaInP quantum-well lasers ' The temperature dependence of threshold current and quantum efficiency for Ga/sub x/In/sub 1-x/P (x=0.4, 0.6; lambda =680, 633 nm) single 80-AA quantum-well lasers is compared and analyzed using a model for the electron leakage current. This model fits the experimental data well, correctly describing the rapid increase in threshold and drop in quantum efficiency as temperature increases. Also, it indicates that the drift (rather than diffusion) component of the electron leakage current, is dominant, because of the poor p-type conductivity in AlGaInP.<
Semiconductor Device Models
Single Quantum Well
Drift Leakage Current
Electron Leakage Current
Poor P-type Conductivity
Quantum Well Lasers
Photonic Band Gap
Photonics And Electrooptics
Engineered Materials, Dielectrics And Plasmas