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Drift leakage current in AlGaInP quantum-well lasers

By: Bour, D.P.; Welch, D.F.; Geels, R.S.; Thornton, R.L.; Treat, D.W.;

1993 / IEEE


This item was taken from the IEEE Periodical ' Drift leakage current in AlGaInP quantum-well lasers ' The temperature dependence of threshold current and quantum efficiency for Ga/sub x/In/sub 1-x/P (x=0.4, 0.6; lambda =680, 633 nm) single 80-AA quantum-well lasers is compared and analyzed using a model for the electron leakage current. This model fits the experimental data well, correctly describing the rapid increase in threshold and drop in quantum efficiency as temperature increases. Also, it indicates that the drift (rather than diffusion) component of the electron leakage current, is dominant, because of the poor p-type conductivity in AlGaInP.<>