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An observation of proton-induced latchup (in CMOS microprocessor)

By: Nichols, D.K.; Pease, R.L.; Schwartz, H.R.; Watson, R.K.; Coss, J.R.;

1992 / IEEE


This item was taken from the IEEE Periodical ' An observation of proton-induced latchup (in CMOS microprocessor) ' Proton-induced latchup in a CMOS microprocessor known to have a very low heavy-ion-induced latchup threshold LET was observed. The latchup cross section vs. proton energy for three different bias conditions is displayed. Average measured of latchup current within an 11-ms window following the onset of latchup are provided, as a function of bias and incident proton energy. These data can be interpreted in terms of the present understanding of SEE phenomena.<>