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Fabry-Perot optical intensity modulator at 1.3 mu m in silicon

By: Xiao, X.; Schwartz, P.V.; Goel, K.K.; Sturm, J.C.;

1991 / IEEE


This item was taken from the IEEE Periodical ' Fabry-Perot optical intensity modulator at 1.3 mu m in silicon ' A new type of all-silicon surface-normal optical intensity modulator at 1.3 mu m is reported. It can be easily butt-coupled with a cleaved single-mode fiber. The device utilizes free-carrier effects in silicon to achieve phase modulation and a built-in Fabry-Perot cavity to convert the phase modulation into intensity modulation. A 10% modulation depth with a driving current density as low as 6*10/sup 3/ A/cm/sup 2/ was demonstrated. Because it can be easily coupled with single-mode fiber, and at the same time it is compatible with silicon technology, this device can provide an interface between silicon electronic circuitry and fiber optics in applications such as the fiber-to-home return link where system cost is a deciding figure.<>