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A comprehensive CAD system for high-performance 300 K-circuit ASIC logic chips
By: Carrig, K.M.; Bassett, R.W.; Abato, R.P.; Panner, J.H.; Sehr, T.W.; Hathaway, D.J.; Gillis, P.S.;
1991 / IEEE
Description
This item was taken from the IEEE Periodical ' A comprehensive CAD system for high-performance 300 K-circuit ASIC logic chips ' A computer-aided design (CAD) system has been developed to support design of CMOS application-specific integrated circuit (ASIC) logic chips containing more than 300 K equivalent two-input NANDs with 180-ps typical gate delays. The underlying technology is a 0.8- mu m, four-level-metal, single-poly CMOS process, with a 0.45- mu m nominal effective channel length and 180-ps typical gate delay. Both standard-cell and gate-array circuit libraries are provided, including fixed and growable memory macros. Key new system features are described in the areas of high-level design and synthesis, delay calculation and timing analysis, timing guidance to physical design, physical design, clock construction, and test generation. Early processing results are reported for several test chips, including a 9.7-mm 2-million-transistor chip and a 14.5-mm 300 K-equivalent-gate chip.<
Related Topics
Logic Cad
180 Ps
Cad System
300 K-circuit Asic Logic Chips
Two-input Nands
Gate Delays
Nominal Effective Channel Length
Gate Delay
Standard-cell
Gate-array Circuit Libraries
Delay Calculation
Timing Analysis
Timing Guidance
Clock Construction
Test Generation
0.8 Micron
Application Specific Integrated Circuits
Design Automation
Cmos Logic Circuits
Delay
Timing
Circuit Testing
Logic Design
Cmos Technology
Integrated Circuit Technology
Cmos Process
Logic Arrays
Cmos Integrated Circuits
Circuit Cad
Application Specific Integrated Circuits
Nand Circuits
Engineered Materials, Dielectrics And Plasmas
Components, Circuits, Devices And Systems
Engineering
Single-poly Cmos Process