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On the suitability of non-hardened high density SRAMs for space applications
1991 / IEEE
This item was taken from the IEEE Periodical ' On the suitability of non-hardened high density SRAMs for space applications ' Several non-radiation-hardened high-density static RAMs (SRAMs) were tested for susceptibility to single event upset (SEU) and latchup. Test results indicate that at present only a few such device types are suitable for use in space applications. Several additional factors such as susceptibility to multiple-bit upsets and to radiation induced permanent damage need to be taken into consideration before these device types can be recommended. One nonhardened SRAM device type has recently been used on a low-Earth-orbit satellite, enabling the upset rate measured in space to be compared to that predicted from ground-based testing.<
Ion Beam Effects
Mos Integrated Circuits
Nonradiation Hardened High Density Srams
Ion Beam Irradiation
Radiation Induced Permanent Damage
Random Access Memory
Single Event Upset
Integrated Circuit Testing
Cmos Integrated Circuits