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Strained InGaAs-GaAs quantum-well lasers by impurity-induced disordering with very low threshold and moderate blue-shift
By: Merz, J.L.; Zou, W.X.; Hong, C.S.; Fu, R.J.; Coldren, L.A.;
1991 / IEEE
This item was taken from the IEEE Periodical ' Strained InGaAs-GaAs quantum-well lasers by impurity-induced disordering with very low threshold and moderate blue-shift ' Summary form only given. The authors report on strained InGaAs-QW impurity-induced disordering (IID) lasers having self-aligned structure with very low threshold current and moderate blue-shift of the lasing wavelength. The strained InGaAs-QW material employed was grown by MOCVD. The fabrication process is described. The authors believe that IID by Si diffusion is a very attractive approach for the fabrication of strained InGaAs-QW lasers.<
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Strained Quantum Well Lasers