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8.5 MW GaAs pulse biased switch optically controlled by 2-D laser diode arrays
By: McLaughlin, D.L.; O'Malley, M.W.; Helgeson, W.D.; Loubriel, G.M.; Zutavern, F.J.; Stabile, P.J.; Rosen, A.;
1990 / IEEE
This item was taken from the IEEE Periodical ' 8.5 MW GaAs pulse biased switch optically controlled by 2-D laser diode arrays ' The development of a compact, all solid-state switch system that has switched up to 8.5 MW into a 38- Omega load is described. The system uses a 2-D laser diode array with a peak power of 850 W to trigger a 1.5-cm-long GaAs photoconductor into a high-gain conduction mode known as lock on. The highest power switch was pulse-charged to 55 kV and delivered 470 A to a 38- Omega load in a 160-ns-long pulse.<
Gaas Pulse Biased Switch
2d Laser Diode Arrays
All Solid-state Switch
High-gain Conduction Mode
Semiconductor Laser Arrays
Solid State Circuits
Laser Beam Applications
Semiconductor Junction Lasers
Photonics And Electrooptics
Engineered Materials, Dielectrics And Plasmas