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2-4 GHz monolithic lateral p-i-n photodetector and MESFET amplifier on GaAs-on-Si

By: Connolly, J.C.; Menna, R.J.; Bechtle, D.W.; Subbarao, S.N.; Narayan, S.Y.; Camisa, R.L.;

1990 / IEEE

Description

This item was taken from the IEEE Periodical ' 2-4 GHz monolithic lateral p-i-n photodetector and MESFET amplifier on GaAs-on-Si ' The design, fabrication, and evaluation of broadband lateral p-i-n photodetectors monolithically integrated with multistage MESFET amplifiers on GaAs-on-Si are described. Unique features of this approach are that (a) the lateral p-i-n structure is compatible with monolithic microwave integrated circuit (MMIC) technology and (b) the p-i-n detector is fabricated directly on the GaAs buffer layer without p/sup +/ and n/sup +/ implants, thus resulting in a simplified fabrication process. The operation of the circuit is compared to that of a similar circuit fabricated on a GaAs substrate. A quantum efficiency exceeding 60% has been measured for the p-i-n detectors. The 2- to 4-GHz frequency responses of one- and two-stage p-i-n/FET preamplifiers are presented. The response varies +or-3 dB over the frequency band.<>