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100 kW DC biased, all semiconductor switch using Si P-I-N diodes and AlGaAs 2-D laser arrays

By: Gombar, A.M.; Stabile, P.J.; Rosen, A.; Herczfeld, P.; Bahasadri, A.; Janton, W.M.;

1989 / IEEE

Description

This item was taken from the IEEE Periodical ' 100 kW DC biased, all semiconductor switch using Si P-I-N diodes and AlGaAs 2-D laser arrays ' A two-dimensional laser array, delivering a peak power of 1 kW with an overall efficiency of 33%, was used to activate silicon p-i-n diodes. A single device, activated by a 1 kW laser, produced a holding voltage of 1000 V and conducted 56 A. When two similar p-i-n diodes were connected in parallel and activated by two 1 kW AlGaAs laser arrays, a holding voltage of 1000 V and conduction of 100 A were obtained.<>