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Laser-activated p-i-n diode switch for RF application
By: Janton, W.; Stabile, P.; Rosen, A.; Hurwitz, R.; Delmaster, J.; Basile, P.; Gombar, A.;
1989 / IEEE
Description
This item was taken from the IEEE Periodical ' Laser-activated p-i-n diode switch for RF application ' Results obtained utilizing an optically activated RF switch in the 2-30-MHz range demonstrate the advantages in optically controlled high-power switches from HF to millimeter wave. Testing of a 0.25-mm-thick p-i-n device activated with 116-W peak optical power from a two-dimensional laser array in a 50- Omega system shows isolation between 20.8 and 49 dB, and an average insertion loss of 0.38 dB when measured between 2.5 and 30 MHz.<
Related Topics
Optically Activated Rf Switch
Optically Controlled High-power Switches
Peak Optical Power
Two-dimensional Laser Array
Isolation
Insertion Loss
2 To 30 Mhz
116 W
P-i-n Diodes
Radio Frequency
Optical Switches
Semiconductor Laser Arrays
Optical Control
Optical Arrays
Hafnium
Millimeter Wave Measurements
System Testing
Pin Photodiodes
Rf Application
0.38 Db
Photodiodes
P-i-n Diodes
Laser Beam Applications
Semiconductor Switches
Fields, Waves And Electromagnetics
Engineering
P-i-n Device
