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Laser-activated p-i-n diode switch for RF application

By: Janton, W.; Stabile, P.; Rosen, A.; Hurwitz, R.; Delmaster, J.; Basile, P.; Gombar, A.;

1989 / IEEE


This item was taken from the IEEE Periodical ' Laser-activated p-i-n diode switch for RF application ' Results obtained utilizing an optically activated RF switch in the 2-30-MHz range demonstrate the advantages in optically controlled high-power switches from HF to millimeter wave. Testing of a 0.25-mm-thick p-i-n device activated with 116-W peak optical power from a two-dimensional laser array in a 50- Omega system shows isolation between 20.8 and 49 dB, and an average insertion loss of 0.38 dB when measured between 2.5 and 30 MHz.<>