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Optically achieved p-i-n diode switch utilizing a two-dimensional laser array at 808 nm as an optical source

By: Herczfeld, P.R.; Stabile, P.J.; Rosen, A.; Bahasadri, A.; Bechtle, D.W.; Rosenberg, A.; McShea, J.; Gombar, A.M.; Janton, W.;

1989 / IEEE

Description

This item was taken from the IEEE Periodical ' Optically achieved p-i-n diode switch utilizing a two-dimensional laser array at 808 nm as an optical source ' The design, fabrication, and application of optically activated switches is described. A 0.25-mm-thick Si p-i-n diode, 3.0 mm in diameter, was tested using an 808-nm 2-D diode laser array (measuring about 2 mm*5 mm) as an optical source. Preliminary testing of a 0.25-mm-thick device has demonstrated a holding voltage of 1000 V and a conduction of 10 A upon activation with 200 W of optical power (the pulse width was 10 mu s). The same device, while being pulse biased to 2.0 kV, has demonstrated 20-A pulses (100-ns pulse width) with less than 10-ns risetime. The laser peak power was 500 W.<>