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5.2-GHz bandwidth monolithic GaAs optoelectronic receiver
By: Harder, C.S.; Vettiger, P.; Patrick, W.; Meier, H.; Van Zeghbroeck, B.;
1988 / IEEE
Description
This item was taken from the IEEE Periodical ' 5.2-GHz bandwidth monolithic GaAs optoelectronic receiver ' A high-speed monolithic optoelectronic receiver consisting of a photodetector, a transimpedance amplifier and a 50- Omega output buffer stage has been fabricated using an enhancement/depletion 0.35- mu m recessed-gate GaAs MESFET process. The interdigitated metal-semiconductor-metal photodetector has a dark current of 0.8 nA, a responsivity of 0.2 A/W, and a capacitance of 12 fF. The bandwidth of the receiver is 5.2 GHz with an effective transimpedance of 300 Omega into a 50- Omega load, which corresponds to a transimpedance bandwidth product of 1.5 THz- Omega .<
Related Topics
Iii-v Semiconductors
Integrated Optoelectronics
Optical Communication Equipment
Photodetectors
Gaas
Optical Communication Equipment
Recessed Gate Mesfet Process
Msm Type
Enhancement/depletion Devices
High-speed
Monolithic Optoelectronic Receiver
Transimpedance Amplifier
Output Buffer Stage
Interdigitated Metal-semiconductor-metal Photodetector
Dark Current
5.2 Ghz
0.35 Micron
0.8 Na
Bandwidth
Gallium Arsenide
Mesfets
Photodetectors
Optical Receivers
Optical Amplifiers
Capacitance
Monolithic Integrated Circuits
Etching
Optical Interconnections
Gallium Arsenide
Field Effect Integrated Circuits
Receivers
Components, Circuits, Devices And Systems
Engineered Materials, Dielectrics And Plasmas
Engineering
Iii-v Semiconductors
