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AlGaAs/GaAs lateral current injection multiquantum well (LCI-MQW) laser using impurity-induced disordering

By: Wada, O.; Makiuchi, M.; Furuya, A.; Fujii, T.;

1988 / IEEE

Description

This item was taken from the IEEE Periodical ' AlGaAs/GaAs lateral current injection multiquantum well (LCI-MQW) laser using impurity-induced disordering ' A lateral current injection (LCI) multiquantum-well (MQW) laser having planar structure is proposed and its advantages compared with conventional vertical structure lasers. A LCI-MQW laser has been fabricated by using Si- and Zn-induced disordering of an MQW active layer. It is shown that a threshold current of 27 mA is achieved under pulsed current driven at room temperature and a very low stray capacitance of 0.27 pF is obtained at zero bias voltage.<>