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A monolithically integrated InGaAs/InP photoreceiver operating with a single 5-V power supply

By: Matsuda, K.; Kubo, M.; Ohnaka, K.; Shibata, J.;

1988 / IEEE

Description

This item was taken from the IEEE Periodical ' A monolithically integrated InGaAs/InP photoreceiver operating with a single 5-V power supply ' A monolithic photoreceiver consisting of an InGaAs p-i-n photodiode and a transimpedance preamplifier in which four junction field-effect transistors four level shift diodes, and a feedback resistor are integrated is described. This photoreceiver has been designed to operate with a single 5-V power supply for the purpose of simplifying the whole transmission system. Easily producible device structures were adopted to increase the yield of the photoreceivers. A circuit transimpedance of 965 Omega and a 3-dB frequency of 240 MHz have been obtained for 5-V operation. Transmission of a 400-Mb/s NRZ signal has been achieved.<>