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Depletion-mode GaAs SISFET's by selective ion implantation

By: Frank, D.J.; Jackson, T.N.; La Tulipe, D.C.; Solomon, P.M.; Baratte, H.; Wright, S.L.;

1987 / IEEE


This item was taken from the IEEE Periodical ' Depletion-mode GaAs SISFET's by selective ion implantation ' Silicon donors have been implanted through the gate and into the (Al,Ga)As insulator of a GaAs SISFET structure in order to produce a negative shift in the device threshold voltage in selective areas of the wafer. The depletion-mode devices fabricated in this manner have controllable threshold voltage, high transconductance (350 mS/mm at 300 K and 380 mS/mm at 77 K for 1-�m gate-length devices), and low gate leakage characteristics. Such devices are suitable for enhance-deplete GaAs SISFET logic circuits.