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Bias-Dependent Microwave Characteristics of Atomic Planar-Doped AIGaAs/InGaAs/GaAs Double Heterojunction MODFET's (Short Paper)

By: Radulescu, D.C.; Wang, G.W.; Chen, Y.K.; Strid, E.; Eastman, L.F.; Tasker, P.J.; Lepore, A.N.;

1987 / IEEE

Description

This item was taken from the IEEE Periodical ' Bias-Dependent Microwave Characteristics of Atomic Planar-Doped AIGaAs/InGaAs/GaAs Double Heterojunction MODFET's (Short Paper) ' Double heterojunction AIGaAs/InGaAs/GaAs modulation-doped field effect transistors (MODFET's) using lattice-strained AIGaAs/InGaAs/GaAs layer structure have been fabricated and evaluated at microwave frequencies for various bias conditions. MODFET's with a 1-�m gate length show a room-temperature peak extrinsic dc transconductance (g/sub m/) of 400 mS/mm with a full channel current of 610 mA/mm. For 0.3-�m-gate MODFET's an extrinsic dc g/sub m/ of 505 mS/mm and a full channel current of 720 mA\mm were obtained. Devices having a 1-�m gate length show a maximum available gain cutoff frequency (f/sub max/) of 85 GHz and a current-gain cutoff frequency (f/sub T/) of 22 GHz from S-parameter measurements. The 0.3-�m devices show an f/sub T/ of 45 GHz and an f/sub max/ of 120 GHz. Bias-dependent equivalent circuit models are also discussed.