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High-efficiency 35-GHz GaAs MESFET's

By: Taylor, G.C.; Eron, M.; Bechtle, D.W.; Shing-Gong Liu; Camisa, R.L.;

1987 / IEEE


This item was taken from the IEEE Periodical ' High-efficiency 35-GHz GaAs MESFET's ' Ka-band GaAs FET's with power output in excess of 200 mW and with efficiencies of more than 20 percent are described. Both ion-implanted and VPE-grown wafers were used. Deep UV (300-nm) lithography and chemical etching was employed to obtain a final gate length of 0.5 �m. These FET chips were flip-chip mounted and had a very low thermal resistance of 50�C/W for a total source periphery of 0.6 mm. At 35 GHz an output power of 220 mW with 21-percent efficiency at 3-dB gain was obtained from a 0.6-mm cell.