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A low dark current InGaAs/InP p-i-n photodiode with covered mesa structure
By: Kubo, M.; Ohnaka, K.; Shibata, J.;
1987 / IEEE
This item was taken from the IEEE Periodical ' A low dark current InGaAs/InP p-i-n photodiode with covered mesa structure ' A new InGaAs p-i-n photodiode with a covered mesa (CM) structure having extremely low dark current characteristics and high yields has been developed. The device consists of only two epitaxial layers: n--InP and n--InGaAs, continuously grown on an n+-InP substrate by liquid-phase epitaxy. The InGaAs layer is chemically etched to be a tapered shape in order to make the fabrication process simple, as compared with a conventional mesa diode. The Zn diffusion to form a p-n junction is carried out without a diffusion mask such as Si