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Surface-mounted GaAs active splitter and attenuator MMIC's used in a 1—10-GHz leveling loop

By: Barta, G.S.; Jones, K.E.; Herrick, G.C.; Strid, E.W.;

1986 / IEEE

Description

This item was taken from the IEEE Periodical ' Surface-mounted GaAs active splitter and attenuator MMIC's used in a 1—10-GHz leveling loop ' A wide-band monolithic GaAs bridge-T variable attenuator has been used with a monolithic GaAs active power splitter to form a compact 1-10-GHz leveling loop having a minimum 9-dB leveling range with buffered output. The attenuator internally optimizes input and output return loss over a 1-10-GHz bandwidth by the use of on-chip GaAs op-amp. The active power splitter provides unity gain to each port over a 1-10-GHz bandwidth by the use of distributed amplification. The entire 4.5-cm by 4.2-cm subsystem was realized with surface mount packages on RT-Duroid´┐Ż, demonstrating new construction techniques for GaAs MMIC assembly.