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A planar InGaAs PIN/JFET fiber-optic detector

By: Uno, T.; Inoue, K.; Ohnaka, K.; Serizawa, H.; Hase, N.; Hasegawa, K.;

1985 / IEEE


This item was taken from the IEEE Periodical ' A planar InGaAs PIN/JFET fiber-optic detector ' A planar structure monolithic optoelectronic integrated circuit (OEIC), comprising an InGaAs PIN photodiode and an InGaAs junction field effect transistor (JFET), has been developed. A cutoff frequency of 1.3 GHz has been successfully obtained. A low dark-current characteristic has also been obtained by polyimide passivation. Design principle, fabrication procedures, and operation characteristics of the PIN/JFET are described.