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P-I-N Diodes for Low-Frequency High-Power Switching Applications

By: Rosen, A.; Caulton, M.; Gombar, A.; Stabile, P.J.;

1982 / IEEE


This item was taken from the IEEE Periodical ' P-I-N Diodes for Low-Frequency High-Power Switching Applications ' The development of high-power low-frequency diodes, conditions for their operation, and results measured in actual circuits are described. Harmonic distortion at 500 kHz and 2 MHz has been found to decrease with increasing diode lifetime and forward-bias current. Large reverse bias voltages are necessary at low frequencies to keep the RF voltage swing from penetrating the forward conduction region. The improvement of p-i-n diode lifetimes with thicker I-layers or with planar construction has been studied and the performance of these diodes in a routing switch is reported.