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A 2-watt X-band silicon power transistor

By: You-Sun Wu; Han-Tzong Yuan; Kruger, J.B.;

1978 / IEEE


This item was taken from the IEEE Periodical ' A 2-watt X-band silicon power transistor ' A silicon power transistor for use atX-band has been developed utilizing e-beam lithography and ion implantation. The transistor has a bar size of 0.5 �1 mm2and consists of four 27.5 �75-�m2active cells. With a specially designed package, the combined output power of four cells operating at common base ClassCmode is nearly 2 W CW at 8 GHz and almost 1.5 W CW at 10 GHz.