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Striped-substrate double-heterostructure lasers

By: Tramontana, J.; Scifres, D.; Burnham, R.; Alimonda, A.;

1975 / IEEE


This item was taken from the IEEE Periodical ' Striped-substrate double-heterostructure lasers ' A different type of stripe-geometry laser is demonstrated in which current confinement is achieved by selective diffusion of the n-type substrate prior to growth of the GaAs/GaAlAs heterostructure layers. This structure exhibits low room-temperature threshold currents resulting from the small lateral-current spreading from the edges of the stripe. Lowest order transverse-mode operation is achieved for stripe widths of 10�m.