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Characterization of positive photoresist

By: Dill, F.H.; Hornberger, W.P.; Hauge, P.S.; Shaw, J.M.;

1975 / IEEE


This item was taken from the IEEE Periodical ' Characterization of positive photoresist ' This paper presents techniques for measuring a new set of parameters used to describe the image forming properties of positive photoresist [1]. Exposure is described by three optical parameters, A, B, and C, through which the process is modelled. Development is described in terms of a rate relationship R(M) between the rate of removal of photoresist in the developer and the degree of exposure of the photoresist. This set of functional parameters provides a complete description of positive photoresist exposure and development, and is the basis for the theoretical process models discussed in the accompanying papers.