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Author: Waser, R.

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Memristors: Devices, Models, and Applications [Scanning the Issue]
2012 / IEEE
By: Mazumder, P.; Waser, R.; Kang, S. M.;
Fast pulse analysis of TiO2 based RRAM nano-crossbar devices
2011 / IEEE / 978-1-4577-1431-3
By: Fleck, K.; Menzel, S.; Bruchhaus, R.; Waser, R.; Lentz, F.; Bottger, U.; Wuttig, M.; Hermes, C.; Salinga, M.; Wimmer, M.;
Modeling Complementary Resistive Switches by nonlinear memristive systems
2011 / IEEE / 978-1-4577-1516-7
By: Menzel, S.; Linn, E.; Waser, R.; Bruchhaus, R.; Bottger, U.; Rosezin, R.;
Scaling Potential of Local Redox Processes in Memristive SrTiO $_{3}$ Thin-Film Devices
2012 / IEEE
By: Dittmann, R.; Muenstermann, R.; Krug, I.; Daesung Park; Waser, R.; Mayer, J.; Besmehn, A.; Kronast, F.; Schneider, C.M.; Menke, T.;
Forming-Free $\hbox{TiO}_{2}$-Based Resistive Switching Devices on CMOS-Compatible W-Plugs
2011 / IEEE
By: Hermes, C.; Bruchhaus, R.; Waser, R.;
3-bit read scheme for single layer Ta2O5 ReRAM
2014 / IEEE
By: Waser, R.; Schonhals, A.; Rana, V.; Menzel, S.;
Modeling of Quantized Conductance Effects in Electrochemical Metallization Cells
2015 / IEEE
By: Tappertzhofen, S.; Valov, I.; Waser, R.; Kenyon, A.J.; Menzel, S.; Linn, E.;
A Complementary Resistive Switch-Based Crossbar Array Adder
2015 / IEEE
By: Menzel, S.; Siemon, A.; Linn, E.; Waser, R.;
Effect of RESET Voltage on Distribution of SET Switching Time of Bipolar Resistive Switching in a Tantalum Oxide Thin Film
2015 / IEEE
By: Fleck, K.; Nishi, Y.; Menzel, S.; Waser, R.; Bottger, U.;
New insights into redox based resistive switches
2013 / IEEE
By: Tappertzhofen, S.; Waser, R.; Valov, I.; Waser, R.;
Statistical modeling of electrochemical metallization memory cells
2014 / IEEE
By: Valov, I.; Menzel, S.; Bottger, U.; Tappertzhofen, S.; Wolf, B.; Waser, R.;
Interrelation of Sweep and Pulse Analysis of the SET Process in SrTiO3 Resistive Switching Memories
2014 / IEEE
By: Bottger, U.; Fleck, K.; Menzel, S.; Waser, R.;
Simulation of dielectric relaxation and conduction of non-ferroelectric perovskite thin films
1995 / IEEE / 0-7803-2040-9
By: Waser, R.; Dietz, G.W.;
Texture etched Al-doped ZnO: a new material for enhanced light trapping in thin film solar cells
1997 / IEEE / 0-7803-3767-0
By: Loffl, A.; Kluth, O.; Keppner, H.; Selvan, J.A.A.; Waser, R.; Hoffmann, S.; Wagner, H.; Rech, B.; Houben, L.; Appenzeller, W.; Beneking, C.; Wieder, S.;
Properties of SrBi/sub 2/Ta/sub 2/O/sub 9/ thin films grown by MOCVD for high density FeRAM applications
1998 / IEEE / 0-7803-4770-6
By: Dehm, C.; Fritsch, E.; Desrochers, D.; Hendrix, B.; Hintermaier, F.; Waser, R.; Lohse, O.; Grossmann, M.; Schumacher, M.; van Buskirk, P.; Roeder, J.; Baum, T.H.; Wendt, H.; Thwaite, P.; Nagel, N.; Mazure, C.; Honlein, W.;
Temperature dependence of the polarization reversal in lead-zirconate-titanate thin film capacitors
1998 / IEEE / 0-7803-4959-8
By: Lohse, O.; Waser, R.; Schneller, T.; Tiedke, S.; Bolten, D.;
Dry-etching of barium-strontium-titanate thin films
1998 / IEEE / 0-7803-4959-8
By: Melaku, Y.; Albrethsen-Keck, B.; Mono, T.; Schneider, S.; Waser, R.;
A new concept and first development results of a PZT thin film actuator
2000 / IEEE / 0-7803-5940-2
By: Hoffmann, M.; Waser, R.; Mokwa, W.; Schnakenberg, U.; Bottger, U.; Schneller, T.; Kuppers, H.;
Finite-element simulation of coupled characteristics of ceramic multilayer capacitors under transient electrical loading
2000 / IEEE / 0-7803-5940-2
By: Waser, R.; Prume, K.;
Digital reflection-type phase shifter based on a ferroelectric planar capacitor
2001 / IEEE
By: Sherman, V.; Waser, R.; Bottger, U.; Hoffmann-Eifert, S.; Setter, N.; Vendik, I.; Vendik, O.; Tagantsev, A.; Astafiev, K.;
Memory device based on a ferroelectric tunnel junction
2002 / IEEE / 0-7803-7317-0
By: Kohlstedt, H.; Schubert, J.; Contreras, J.R.; Waser, R.;
Leakage current properties of Ba/sub 0.7/Sr/sub 0.3/TiO/sub 3/ thin films depending on the film thickness
2002 / IEEE / 0-7803-7414-2
By: Kugeler, C.; Waser, R.; Liedtke, R.;
Theoretical calculations and performance results of a PZT thin film actuator
2003 / IEEE
By: Schnakenberg, U.; Bottger, U.; Schneller, T.; Kuppers, H.; Hoffmann, M.; Waser, R.; Mokwa, W.;
Simulation and measurements of the piezoelectric properties response (d/sub 33/) of piezoelectric layered thin film structures influenced by the top-electrode size
2004 / IEEE / 0-7803-8410-5
By: Tiedke, S.; Schmitz-Kempen, T.; Waser, R.; Bottger, U.; Prume, K.; Roelofs, A.; Kugeler, C.; Gerber, P.;
CMOS based arrays of nanogap devices for molecular electronics
2005 / IEEE / 0-7803-9199-3
By: Waser, R.; Weber, W.; Rosner, W.; Stadele, M.; Hofmann, F.; Risch, L.; Specht, M.; Mustafa, Y.; Luyken, R.J.; Ruttkowski, E.;
A Novel Reference Scheme for Reading Passive Resistive Crossbar Memories
2006 / IEEE
By: Waser, R.; Mustafa, J.;
Sample-tip interaction of piezoresponse force microscopy in ferroelectric nanostructures
2006 / IEEE
By: Rudiger, A.; Peter, F.; Reichenberg, B.; Waser, R.; Szot, K.;
On the Existence of Two Different Resistive Switching Mechanisms in Metal Organic Charge Transfer Complex Thin Films
2006 / IEEE / 0-7803-9738-X
By: Bottger, U.; Klopstra, B.; Kever, T.; Waser, R.;
Bipolar and Unipolar Resistive Switching in Cu-Doped $ \hbox{SiO}_{2}$
2007 / IEEE
By: Waser, R.; Thermadam, S.C.P.; Schindler, C.; Kozicki, M.N.;
Resistive switching in Ag-Ge-Se with extremely low write currents
2007 / IEEE / 978-1-4244-1361-4
By: Meier, M.; Schindler, C.; Kozicki, M.N.; Waser, R.;
The influence of non-ferroelectric interface layers and inclusions on the imprint behavior of ferroelectric thin film capacitors
2007 / IEEE / 978-1-4244-1333-1
By: Braeuhaus, D.; Boettger, U.; Waser, R.;
Non-Volatile Memory Concepts Based on Resistive Switching
2007 / IEEE / 978-1-4244-1333-1
By: Waser, R.;
Signal Form Influences on the Fatigue Behavior of PZT Thin Film Capacitors
2007 / IEEE / 978-1-4244-1333-1
By: Schorn, P.J.; Brauhaus, D.; Waser, R.; Bottger, U.;
Liquid Injection Atomic Layer Deposition of Pb(Zr,Ti)O3 Thin Films on Three Dimensional Structures
2007 / IEEE / 978-1-4244-1333-1
By: Waser, R.; Hoffmann-Eifert, S.; Watanabe, T.; Cheol Seong Hwang;
Development of miniature LTCC filter for TV broadcasting band by using substrates of mixed dielectrics
2007 / IEEE / 978-2-87487-001-9
By: Lanagan, M.; Waser, R.; Semouchkin, G.; Baker, A.; Semouchkina, E.; Hennings, A.;
A Fundamental Analysis of Nano-Crossbars with Non-Linear Switching Materials and its Impact on TiO2 as a Resistive Layer
2008 / IEEE / 978-1-4244-2104-6
By: Noll, T.G.; Flocke, A.; Waser, R.; Nauenheim, C.; Kugeler, C.;
Nano-Crossbar Arrays for Nonvolatile Resistive RAM (RRAM) Applications
2008 / IEEE / 978-1-4244-2104-6
By: Kugeler, C.; Rudiger, A.; Waser, R.; Flocke, A.; Noll, T.G.; Nauenheim, C.;
A Novel Dual-Layered Electrolytic Resistance Memory with Enhanced Retention
2008 / IEEE / 978-1-4244-2104-6
By: Soni, R.; Waser, R.; Kugeler, C.; Rudiger, A.; Weides, M.; Schindler, C.;
A Nonvolatile Memory With Resistively Switching Methyl-Silsesquioxane
2009 / IEEE
By: Rudiger, A.; Rosezin, R.; Gilles, S.; Schindler, C.; Meier, M.; Waser, R.; Kugeler, C.;
From micrometric to nanometric scale switching of CuTCNQ-based non-volatile memory structures
2008 / IEEE / 978-1-4244-2411-5
By: Bottger, U.; Demolliens, A.; Thomas, M.; Waser, R.; Turquat, C.; Kever, T.; Muller, C.; Deleruyelle, D.;
Fast resistance switching of TiO2 and MSQ thin films for non-volatile memory applications (RRAM)
2008 / IEEE / 978-1-4244-2411-5
By: Waser, R.; Rudiger, A.; Meier, M.; Nauenheim, C.; Kugeler, C.;
Electrochemical and thermochemical memories
2008 / IEEE / 978-1-4244-2377-4
By: Waser, R.;
Phenomenological considerations of resistively switching TiO2 in nano crossbar arrays
2009 / IEEE / 978-1-4244-3704-7
By: Nauenheim, C.; Waser, R.; Rudiger, A.; Trellenkamp, S.; Kugeler, C.;
A multilayer RRAM nanoarchitecture with resistively switching Ag-doped spin-on glass
2009 / IEEE / 978-1-4244-3704-7
By: Meier, M.; Waser, R.; Kugeler, C.; Rudiger, A.; Gilles, S.; Rosezin, R.;
Fast resistive switching in WO3 thin films for non-volatile memory applications
2009 / IEEE / 978-981-08-3694-8
By: Kugeler, C.; Bottger, U.; Klopstra, B.; Menzel, S.; Waser, R.; Weng, R.; Rosezin, R.;
Ultra-low current resistive memory based on Cu-SiO2
2008 / IEEE / 978-1-4244-2071-1
By: Schindler, C.; Waser, R.; Kozicki, M.N.; Weides, M.;
Electrical characterization of single biphenyl-propanethiol capped 4nm Au nanoparticles
2010 / IEEE / 978-1-4244-7032-7
By: Waser, R.; Simon, U.; Blech, K.; Karthaeuser, S.; Manheller, M.;
Analysis of Transient Currents During Ultrafast Switching of $\hbox{TiO}_{2}$ Nanocrossbar Devices
2011 / IEEE
By: Salinga, M.; Wimmer, M.; Bruns, G.; Fleck, K.; Menzel, S.; Bottger, U.; Hermes, C.; Waser, R.; Wuttig, M.; Schmitz-Kempen, T.; Bruchhaus, R.;

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