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Author: Visconti, A.

Results

Effects of Total Ionizing Dose on the Retention of 41-nm NAND Flash Cells

2011 / IEEE
By: Gerardin, S.; Bagatin, M.; Czeppel, L.T.; Bertuccio, M.; Beltrami, S.; Visconti, A.; Paccagnella, A.;

Angular Dependence of Heavy-Ion Induced Errors in Floating Gate Memories

2011 / IEEE
By: Bonanomi, M.; Visconti, A.; Paccagnella, A.; Bagatin, M.; Gerardin, S.; Beltrami, S.;

Single Event Effects in 90-nm Phase Change Memories

2011 / IEEE
By: Gerardin, S.; Ferlet-Cavrois, V.; Vela, M.; Pellizzer, F.; Bagatin, M.; Bonanomi, M.; Visconti, A.; Paccagnella, A.;

Neutron-Induced Upsets in NAND Floating Gate Memories

2012 / IEEE
By: Visconti, A.; Paccagnella, A.; Ferrario, A.; Bagatin, M.; Beltrami, S.; Frost, C.D.; Gerardin, S.; Gorini, G.; Andreani, C.;

Annealing of heavy-ion induced floating gate errors: LET and feature size dependence

2009 / IEEE / 978-1-4577-0493-2
By: Harboe-Sorensen, R.; Cellere, G.; Gerardin, S.; Bagatin, M.; Paccagnella, A.; Bonanomi, M.; Beltrami, S.; Visconti, A.;

Reliability Characterization Issues for Nanoscale Flash Memories: A Case Study on 45-nm NOR Devices

2013 / IEEE
By: Spinelli, A. S.; Lacaita, A. L.; Beltrami, S.; Chiavarone, L.; Monzio Compagnoni, C.; Miccoli, C.; Visconti, A.;

A co-ordinate approach for the control of road vehicles

2001 / IEEE
By: Valtolina, E.; Longhi, A.; Visconti, A.; Bittanti, S.; Savaresi, S.M.;

First Detection of Single-Electron Charging of the Floating Gate of NAND Flash Memory Cells

2015 / IEEE
By: Visconti, A.; Lacaita, A.L.; Spinelli, A.S.; Miccoli, C.; Paolucci, G.M.; Monzio Compagnoni, C.; Goda, A.;

Neutron and Alpha Single Event Upsets in Advanced NAND Flash Memories

2014 / IEEE
By: Visconti, A.; Ferlet-Cavrois, V.; Frost, C. D.; Paccagnella, A.; Bagatin, M.; Gerardin, S.;

40-mm/sup 2/ 3-V-only 50-MHz 64-Mb 2-b/cell CHE NOR flash memory

2000 / IEEE
By: Commodaro, S.; Yero, E.; Campardo, G.; Torelli, G.; Khouri, O.; Visconti, A.; Modelli, A.; Grossi, A.; Bez, R.; Pierin, A.; Micheloni, R.; Golla, C.; Motta, I.; Scotti, M.; Manstretta, A.; Picca, M.; Sacco, A.; Mognoni, S.; Zammattio, M.;

New technique for fast characterization of SILC distribution in flash arrays

2001 / IEEE / 0-7803-6587-9
By: Ielmini, D.; Visconti, A.; Confalonieri, L.; Lacaita, A.L.; Spinelli, A.S.;

Dynamic modeling and control of a car transmission system

2001 / IEEE / 0-7803-6736-7
By: Sandoni, G.; Visconti, A.; Zanasi, R.; Morselli, R.;

Localization of SILC in flash memories after program/erase cycling

2002 / IEEE / 0-7803-7352-9
By: Ielmini, D.; Visconti, A.; Leone, R.; Lacaita, A.L.; Spinelli, A.S.;

Statistical profiling of SILC spot in flash memories

2002 / IEEE
By: Visconti, A.; Lacaita, A.L.; Spinelli, A.S.; Ielmini, D.;

Head-neck model for the evaluation of passenger's comfort

2002 / IEEE / 0-7803-7398-7
By: Zanasi, R.; Cavanna, M.; Visconti, A.; Morselli, R.;

Drain-accelerated degradation of tunnel oxides in Flash memories

2002 / IEEE / 0-7803-7462-2
By: Lacaita, A.L.; Ielmini, D.; Spinelli, A.S.; Chimenton, A.; Olivo, P.; Visconti, A.;

Generation of acceleration profiles for smooth gear shift operations

2002 / IEEE / 0-7803-7474-6
By: Zanasi, R.; Morselli, R.; Visconti, A.;

Introduction to flash memory

2003 / IEEE
By: Visconti, A.; Modelli, A.; Camerlenghi, E.; Bez, R.;

Advanced flash memory reliability

2004 / IEEE / 0-7803-8528-4
By: Bez, R.; Visconti, A.; Modelli, A.;

Heavy ion irradiation of floating gate memory cells

2004 / IEEE / 0-7803-8528-4
By: Paccagnella, A.; Cellere, G.; Visconti, A.; Caprara, P.;

Transient conductive path induced by a Single ion in 10 nm SiO/sub 2/ Layers

2004 / IEEE
By: Visconti, A.; Paccagnella, A.; Cellere, G.; Candelori, A.; Bonanomi, M.;

A model for TID effects on floating Gate Memory cells

2004 / IEEE
By: Cellere, G.; Lora, S.; Caprara, P.; Bonanomi, M.; Visconti, A.; Paccagnella, A.;

What we have learned on flash memory reliability in the last ten years

2004 / IEEE / 0-7803-8684-1
By: Visconti, A.; Modelli, A.; Bez, R.; Cappelletti, P.;

High energy oxide traps and anomalous soft-programming in flash memories

2004 / IEEE / 0-7803-8684-1
By: Spinelli, A.S.; Ielmini, D.; Visconti, A.; Chiavarone, L.; Lacaita, A.L.; Robustelli, M.;

Transient conductive path induced in floating gate memories by single ions

2005 / IEEE / 0-7803-9081-4
By: Cellere, G.; Bonanomi, M.; Visconti, A.; Paccagnella, A.;

Soft errors induced by single heavy ions in floating gate memory arrays

2005 / IEEE / 0-7695-2464-8
By: Visconti, A.; Paccagnella, A.; Cellere, G.; Bonanomi, M.;

Characterization of oxide trap energy by analysis of the SILC roll-off regime in flash memories

2006 / IEEE
By: Spinelli, A.S.; Ielmini, D.; Visconti, A.;

Radiation induced leakage current in floating gate memory cells

2005 / IEEE
By: Visconti, A.; Paccagnella, A.; Larcher, L.; Cellere, G.; Bonanomi, M.;

Effect of different total ionizing dose sources on charge loss from programmed floating gate cells

2005 / IEEE
By: Lora, S.; Candelori, A.; Bonanomi, M.; Visconti, A.; Paccagnella, A.; Cellere, G.;

CMOS and interconnect reliability process and electrical degradation in flash memories and performance boosted CMOS devices

2005 / IEEE / 0-7803-9268-X
By: Tonti, W.; Visconti, A.;

A new charge-trapping technique to extract SILC-trap time constants in SiO/sub 2/

2005 / IEEE / 0-7803-9268-X
By: Chiavarone, L.; Lacaita, A.L.; Spinelli, A.S.; Ielmini, D.; Visconti, A.;

A study of hot-hole injection during programming drain disturb in flash memories

2006 / IEEE
By: Visconti, A.; Spinelli, A.S.; Ghetti, A.; Ielmini, D.;

Erratic effects of irradiation in floating gate memory cells

2006 / IEEE / 0-7695-2620-9
By: Visconti, A.; Paccagnella, A.; Cellere, G.; Bonanomi, M.;

Single Event Leakage Current in Flash memory

2006 / IEEE / 1-4244-0097-X
By: Cellere, G.; Bonanomi, M.; Visconti, A.; Paccagnella, A.; Larcher, L.;

Single Event Effects in NAND Flash Memory Arrays

2006 / IEEE
By: Paccagnella, A.; Cellere, G.; Beltrami, S.; Bonanomi, M.; Visconti, A.;

Secondary Effects of Single Ions on Floating Gate Memory Cells

2006 / IEEE
By: Cellere, G.; Bonanomi, M.; Visconti, A.; Paccagnella, A.;

Variability in FG Memories Performance After Irradiation

2006 / IEEE
By: Paccagnella, A.; Cellere, G.; Bonanomi, M.; Visconti, A.;

Defects spectroscopy in SiO2 by statistical random telegraph noise analysis

2006 / IEEE / 1-4244-0438-X
By: Bonanomi, M.; Lacaita, A.L.; Spinelli, A.S.; Riva, A.; Compagnoni, C.M.; Gusmeroli, R.; Visconti, A.;

Statistical Investigation of Random Telegraph Noise ID Instabilities in Flash Cells at Different Initial Trap-filling Conditions

2007 / IEEE / 1-4244-0918-7
By: Gusmeroli, R.; Compagnoni, C.M.; Visconti, A.; Bonanomi, M.; Lacaita, A.L.; Spinelli, A.S.;

Single Event Effects in 1Gbit 90nm NAND Flash Memories under Operating Conditions

2007 / IEEE / 0-7695-2918-6
By: Cellere, G.; Bagatin, M.; Maccarrone, M.; Beltrami, S.; Visconti, A.; Paccagnella, A.; Gerardin, S.;

Total Ionizing Dose Effects in NOR and NAND Flash Memories

2007 / IEEE
By: Beltrami, S.; Bonanomi, M.; Visconti, A.; Paccagnella, A.; Schwank, J.R.; Paillet, P.; Cellere, G.; Shaneyfelt, M.R.;

Augmented Interval Type-2 Fuzzy Set Methodologies for Email Granulation

2007 / IEEE / 978-1-4244-1607-3
By: Tahayori, H.; Degli Antoni, G.; Visconti, A.;

Giant Random Telegraph Signals in Nanoscale Floating-Gate Devices

2007 / IEEE
By: Ghidini, G.; Marinoni, A.; Ghetti, A.; Fantini, P.; Marmiroli, A.; Visconti, A.;

Single Event Upset in FG memory arrays - Prompt and permanent data corruption in modern and future technologies

2007 / IEEE / 978-1-4244-1361-4
By: Cellere, G.; Virtanen, A.; Harboe-Sorensen, R.; Beltrami, S.; Bonanomi, M.; Visconti, A.; Paccagnella, A.;

Angular Dependence of Heavy Ion Effects in Floating Gate Memory Arrays

2007 / IEEE
By: Visconti, A.; Paccagnella, A.; Cellere, G.; Virtanen, A.; Harboe-Sorensen, R.; Bonanomi, M.;

Statistical Model for Random Telegraph Noise in Flash Memories

2008 / IEEE
By: Bonanomi, M.; Lacaita, A.L.; Spinelli, A.S.; Gusmeroli, R.; Monzio Compagnoni, C.; Visconti, A.;

email granulation based on distributed-interval type-2 fuzzy set methodologies

2007 / IEEE / 0-7695-3032-X
By: Degli Antoni, G.; Visconti, A.; Tahayori, H.;

First evidence for injection statistics accuracy limitations in NAND Flash constant-current Fowler-Nordheim programming

2007 / IEEE / 978-1-4244-1507-6
By: Ghetti, A.; Beltrami, S.; Lacaita, A.L.; Gusmeroli, R.; Spinelli, A.S.; Compagnoni, C.M.; Visconti, A.;

RTN ${\bf V}_{{\bf T}}$ Instability From the Stationary Trap-Filling Condition: An Analytical Spectroscopic Investigation

2008 / IEEE
By: Spinelli, A.S.; Gusmeroli, R.; Compagnoni, C.M.; Visconti, A.;

Application of controlled-drift detectors to spectroscopic X-ray imaging

2007 / IEEE / 978-1-4244-0922-8
By: Hartmann, R.; Guazzoni, C.; Castoldi, A.; Visconti, A.; Struder, L.; Ozkan, C.;

Spam filtering model based on interval type-2 fuzzy set paradigm

2007 / IEEE / 978-1-4244-1430-7
By: Visconti, A.; Tahayori, H.; Degli Antoni, G.;

Physical modeling of single-trap RTS statistical distribution in flash memories

2008 / IEEE / 978-1-4244-2049-0
By: Compagnoni, C.M.; Bonanomi, M.; Ghetti, A.; Visconti, A.; Lacaita, A.L.; Spinelli, A.S.;

Traces of errors due to single ion in floating gate memories

2008 / IEEE / 978-1-4244-1810-7
By: Harboe-Sorensen, R.; Bonanomi, M.; Visconti, A.; Paccagnella, A.; Cellere, G.; Virtanen, A.;

nor and nand Flash Arrays">Cycling Effect on the Random Telegraph Noise Instabilities of nor and nand Flash Arrays

2008 / IEEE
By: Visconti, A.; Bonanomi, M.; Beltrami, S.; Spinelli, A.S.; Compagnoni, C.M.;

nand Flash Program Algorithm Due to the Electron Injection Statistics">Ultimate Accuracy for the nand Flash Program Algorithm Due to the Electron Injection Statistics

2008 / IEEE
By: Visconti, A.; Ghetti, A.; Beltrami, S.; Gusmeroli, R.; Spinelli, A.S.; Monzio Compagnoni, C.;

Effect of Ion Energy on Charge Loss From Floating Gate Memories

2008 / IEEE
By: Virtanen, A.; Harboe-Sorensen, R.; Beltrami, S.; Bonanomi, M.; Visconti, A.; Paccagnella, A.; Cellere, G.;

Analytical Model for the Electron-Injection Statistics During Programming of Nanoscale nand Flash Memories

2008 / IEEE
By: Compagnoni, C.M.; Visconti, A.; Spinelli, A.S.; Gusmeroli, R.;

Direct Evidence of Secondary Recoiled Nuclei From High Energy Protons

2008 / IEEE
By: Blackmore, E.; Virtanen, A.; Baggio, J.; Ferlet-Cavrois, V.; Paillet, P.; Harboe-Sorensen, R.; Lambert, D.; Shaneyfelt, M.; Schwank, J.; Beltrami, S.; Visconti, A.; Paccagnella, A.; Cellere, G.; Fuochi, P.;

Key Contributions to the Cross Section of NAND Flash Memories Irradiated With Heavy Ions

2008 / IEEE
By: Harboe-Sorensen, R.; Beltrami, S.; Visconti, A.; Paccagnella, A.; Virtanen, A.; Gerardin, S.; Bagatin, M.; Cellere, G.;

nand Floating Gate Memories?">Can Atmospheric Neutrons Induce Soft Errors in nand Floating Gate Memories?

2009 / IEEE
By: Paccagnella, A.; Bagatin, M.; Gerardin, S.; Cellere, G.; Roche, P.; Visconti, A.; Virtanen, A.; Harboe-Sorensen, R.; Beltrami, S.; Bonanomi, M.;

Neutron-induced soft errors in advanced flash memories

2008 / IEEE / 978-1-4244-2377-4
By: Paccagnella, A.; Andreani, C.; Bagatin, M.; Gerardin, S.; Cellere, G.; Platt, S.; Pietropaolo, A.; Gorini, G.; Visconti, A.; Fuochi, P.; Frost, C.; Virtanen, A.; Harboe Sorensen, R.; Gasiot, G.; Roche, P.; Beltrami, S.; Bonanomi, M.;

Scaling trends for random telegraph noise in deca-nanometer Flash memories

2008 / IEEE / 978-1-4244-2377-4
By: Visconti, A.; Spinelli, A.S.; Chiavarone, L.; Beltrami, S.; Ghetti, A.; Biancardi, F.; Compagnoni, C.M.; Lacaita, A.L.;

NAND Flash Memories">Investigation of the Electron-Injection Spread in Barrier-Engineered NAND Flash Memories

2009 / IEEE
By: Spinelli, A.S.; Ghidotti, M.; Gusmeroli, R.; Monzio Compagnoni, C.; Visconti, A.;

Granular electron injection and random telegraph noise impact on the programming accuracy of NOR Flash memories

2009 / IEEE / 978-1-4244-2888-5
By: Spinelli, A.S.; Chiavarone, L.; Compagnoni, C.M.; Visconti, A.; Calabrese, M.; Lacaita, A.L.; Ghidotti, M.; Gusmeroli, R.;

Random Telegraph Noise Effect on the Programmed Threshold-Voltage Distribution of Flash Memories

2009 / IEEE
By: Lacaita, A.L.; Ghidotti, M.; Compagnoni, C.M.; Visconti, A.; Spinelli, A.S.;

TID Sensitivity of NAND Flash Memory Building Blocks

2009 / IEEE
By: Beltrami, S.; Visconti, A.; Paccagnella, A.; Gerardin, S.; Cellere, G.; Bagatin, M.;

Effect of ion energy on charge loss from Floating Gate memories

2007 / IEEE / 978-1-4244-1704-9
By: Beltrami, S.; Bonanomi, M.; Visconti, A.; Paccagnella, A.; Cellere, G.; Virtanen, A.; Harboe-Sorensen, R.;

Error Instability in Floating Gate Flash Memories Exposed to TID

2009 / IEEE
By: Cellere, G.; Gerardin, S.; Bagatin, M.; Beltrami, S.; Bonanomi, M.; Visconti, A.; Paccagnella, A.;

Data Retention and Program/Erase Sensitivity to the Array Background Pattern in Deca-nanometer nand Flash Memories

2010 / IEEE
By: Compagnoni, C.M.; Visconti, A.; Spinelli, A.S.; Ghidotti, M.; Ghetti, A.;

Detecting misbehaving nodes in MANET with an artificial immune system based on type-2 fuzzy sets

2009 / IEEE / 978-1-4244-5648-2
By: Tahayori, H.; Visconti, A.;

Gene Ontology Rewritten for Computing Gene Functional Similarity

2010 / IEEE / 978-1-4244-5918-6
By: Calogero, R.A.; Botta, M.; Cordero, F.; Visconti, A.;

Fundamental Limitations to the Width of the Programmed $V_{T}$ Distribution of nor Flash Memories

2010 / IEEE
By: Spinelli, A.S.; Lacaita, A.L.; Ghidotti, M.; Calabrese, M.; Chiavarone, L.; Compagnoni, C.M.; Visconti, A.;

Investigation of the threshold voltage instability after distributed cycling in nanoscale NAND Flash memory arrays

2010 / IEEE / 978-1-4244-5429-7
By: Miccoli, C.; Compagnoni, C.M.; Visconti, A.; Spinelli, A.S.; Lacaita, A.L.; Ghidotti, M.; Beltrami, S.; Mottadelli, R.;

Scaling trends of neutron effects in MLC NAND Flash memories

2010 / IEEE / 978-1-4244-5429-7
By: Bagatin, M.; Gerardin, S.; Frost, C.D.; Gorini, G.; Paccagnella, A.; Andreani, C.; Beltrami, S.; Visconti, A.; Cellere, G.;

Operations on type-2 fuzzy sets based on the set of pseudo-highest intersection points of convex fuzzy sets

2010 / IEEE / 978-1-4244-7858-3
By: Visconti, A.; Sadeghian, A.; Tahayori, H.;

Annealing of Heavy-Ion Induced Floating Gate Errors: LET and Feature Size Dependence

2010 / IEEE
By: Paccagnella, A.; Bagatin, M.; Cellere, G.; Gerardin, S.; Visconti, A.; Harboe-Sorensen, R.; Bonanomi, M.; Beltrami, S.;

Impact of Control-Gate and Floating-Gate Design on the Electron-Injection Spread of Decananometer nand Flash Memories

2010 / IEEE
By: Miccoli, C.; Compagnoni, C.M.; Visconti, A.; Spinelli, A.S.; Marmiroli, A.; Lacaita, A.L.;

Impact of Neutral Threshold-Voltage Spread and Electron-Emission Statistics on Data Retention of Nanoscale nand Flash

2010 / IEEE
By: Amoroso, S.M.; Compagnoni, C.M.; Miccoli, C.; Spinelli, A.S.; Visconti, A.; Fantini, P.; Spessot, A.;

Increase in the Heavy-Ion Upset Cross Section of Floating Gate Cells Previously Exposed to TID

2010 / IEEE
By: Bonanomi, M.; Visconti, A.; Cellere, G.; Paccagnella, A.; Gerardin, S.; Bagatin, M.;

Heavy-Ion Induced Threshold Voltage Tails in Floating Gate Arrays

2010 / IEEE
By: Visconti, A.; Cellere, G.; Paccagnella, A.; Bagatin, M.; Bonanomi, M.; Prokofiev, A.V.; Gerardin, S.; Hjalmarsson, A.;

Impact of Technology Scaling on the Heavy-Ion Upset Cross Section of Multi-Level Floating Gate Cells

2011 / IEEE
By: Bagatin, M.; Visconti, A.; Paccagnella, A.; Gerardin, S.;

Heavy-Ion Induced Threshold Voltage Shifts in Sub 70-nm Charge-Trap Memory Cells

2011 / IEEE
By: Bagatin, M.; Gerardin, S.; Greco, E.; Visconti, A.; Paccagnella, A.;

Threshold-Voltage Instability Due to Damage Recovery in Nanoscale NAND Flash Memories

2011 / IEEE
By: Spinelli, A.S.; Beltrami, S.; Compagnoni, C.M.; Miccoli, C.; Visconti, A.;

TID sensitivity of NAND Flash memory building blocks

2008 / IEEE / 978-1-4577-0482-6
By: Paccagnella, A.; Gerardin, S.; Cellere, G.; Bagatin, M.; Beltrami, S.; Visconti, A.;