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Author: Van Zeghbroeck, B.

Results

5.2-GHz bandwidth monolithic GaAs optoelectronic receiver
1988 / IEEE
By: Harder, C.S.; Vettiger, P.; Patrick, W.; Meier, H.; Van Zeghbroeck, B.;
All electrical laser diode characterization by monolithic integration with a photodiode
1991 / IEEE
By: Chu, A.; Van Zeghbroeck, B.; Gigase, Y.;
Fabrication and characterization of an In/sub 0.53/Ga/sub 0.47/As/InP photon transport transistor
1993 / IEEE
By: Lee, H.Y.; Gigase, Y.; Chu, A.K.; Van Zeghbroeck, B.; Robinson, G.; Hafich, M.J.;
Optical data communication between Josephson-junction circuits and room-temperature electronics
1993 / IEEE
By: Van Zeghbroeck, B.;
A novel high-speed silicon MSM photodetector operating at 830 nm wavelength
1995 / IEEE
By: Lee, H.C.; Van Zeghbroeck, B.;
High-temperature GaN/SiC heterojunction bipolar transistor with high gain
1994 / IEEE / 0-7803-2111-1
By: Moustakas, T.D.; Molnar, R.J.; Lee, H.C.; Chang, S.S.; Pankove, J.; Van Zeghbroeck, B.;
Fabrication and analysis of Si/SiO2 micro-mechanical modulators
1996 / IEEE / 0-7803-3175-3
By: Van Zeghbroeck, B.; Patterson, J.;
Micromechanical optoelectronic switch and amplifier (MIMOSA)
1999 / IEEE
By: Patterson, J.; Waters, R.; Van Zeghbroeck, B.;
A Novel Multi-functional Optoelectronic Device for Large Scale Integration: a Detector, an Electronic Transistor and a Laser Diode in One
1995 / IEEE / 0-7803-2448-X
By: Van Zeghbroeck, B.; Lee, H.C.; Chu, A.K.;
Fabrication and characterization of 4H-SiC MOS capacitors with atomic layer deposited (ALD) SiO/sub 2/
2000 / IEEE / 0-7803-6381-7
By: Elam, J.; Perez, I.; Van Zeghbroeck, B.; Torvik, J.T.; Groner, M.; George, S.;
SiC bipolar transistors for RF applications
2001 / IEEE / 0-7803-7432-0
By: Torvik, J.T.; Krutsinger, R.; Perez-Wurfl, I.; Van Zeghbroeck, B.;
Parallelizing a DNA simulation code for the Cray MTA-2
2002 / IEEE / 0-7695-1653-X
By: Glaser, M.A.; Bokhari, S.H.; Van Zeghbroeck, B.; Sauer, J.R.; Lansac, Y.; Jordan, H.F.;
Superconducting current injection transistor with very high critical-current-density edge-junctions
1985 / IEEE
By: Van Zeghbroeck, B.;
A Josephson sampler with 2.1 ps resolution
1985 / IEEE
By: Van Zeghbroeck, B.; Wolf, P.; Deutsch, U.;
RF 4H-SiC bipolar junction transistors
2002 / IEEE / 0-7803-7478-9
By: Van Zeghbroeck, B.; Torviko, J.; Konstantinov, A.; Perez-Wurfl, I.;
4H-SiC RF bipolar junction transistors
2003 / IEEE / 0-7803-7727-3
By: Torvik, J.; Perez, I.; Van Zeghbroeck, B.;
215W pulsed class A UHF power amplification based on SiC bipolar technology
2004 / IEEE / 0-7803-8284-6
By: Van Zeghbroeck, B.; Abrhaley, F.; Torvik, K.; Irwin, R.; Chih-Fang Huang; Torvik, J.; Feng Zhao; Perez, I.;
Analysis of transit times and minority carrier mobility in n-p-n 4H-SiC bipolar junction transistors
2005 / IEEE
By: Feng Zhao; Van Zeghbroeck, B.; Torvik, J.; Chih-Fang Huang; Perez, I.;
Rugged UHF 4H-SiC BJTs with Record 22.8 W/mm Power Density and 8.3 dB Gain
2006 / IEEE / 0-7803-9748-7
By: Wurfl, I.-P.; Feng Zhao; Van Zeghbroeck, B.; Torvik, J.; Mallinger, M.; Chiu, J.; Torvik, K.;
Demonstration of Long-Pulse Power Amplification at 1 GHz Using 4H-SiC RF BJTs on a Conductive Substrate
2007 / IEEE
By: Tiefeng Shi; Torvik, K.; Van Zeghbroeck, B.; Feng Zhao; Mallinger, M.;
4H-SiC RF BJTs with Long Pulse L-band Operation
2007 / IEEE / 978-1-4244-1101-6
By: Feng Zhao; Van Zeghbroeck, B.; Mallinger, M.; Tiefeng Shi;
6.4: Fabrication of 4H-SiC cold field emitter arrays
2010 / IEEE / 978-1-4244-7888-0
By: Borsa, T.; Van Zeghbroeck, B.;
High-speed nanoscale metal-semiconductor-metal photodetectors with terahertz bandwidth
2010 / IEEE / 978-1-4244-7017-4
By: Van Zeghbroeck, B.; Marks, Z.;

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