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Author: Turner, G.W.

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High-power slab-coupled optical waveguide amplifiers

2011 / IEEE / 978-1-4244-8939-8
By: Redmond, S.M.; Connors, M.K.; Donnelly, J.P.; Missaggia, L.J.; Mathewson, D.C.; Smith, G.M.; Turner, G.W.; Sanchez-Rubio, A.; Swint, R.B.;

Directly-modulated high-power slab-coupled optical waveguide lasers

2011 / IEEE / 978-1-4244-8939-8
By: Smith, G.M.; Juodawlkis, P.W.; Turner, G.W.; Mathewson, D.C.; Connors, M.K.; Missaggia, L.J.; Donnelly, J.P.; Siegel, A.M.; Duerr, E.K.;

Coherent beam combining with high-power slab-coupled optical waveguide amplifiers

2012 / IEEE / 978-1-4577-1527-3
By: Smith, G.M.; Redmond, S.M.; Turner, G.W.; Sanchez-Rubio, A.; Swint, R.B.; Mathewson, D.C.; Creedon, K.J.; Connors, M.K.; Missaggia, L.J.; Donnelly, J.P.;

Monolithic integration of GaAs/AlGaAs LED and Si driver circuit

1988 / IEEE
By: Choi, H.K.; Tsaur, B.-Y.; Turner, G.W.; Mattia, J.P.;

Sidegating reduction for GaAs integrated circuits by using a new buffer layer

1988 / IEEE
By: Finn, M.C.; Turner, G.W.; Chen, C.L.; Smith, F.W.; Calawa, A.R.; Manfra, M.J.; Mahoney, L.J.;

Through-wafer optical communication using monolithic InGaAs-on-Si LEDs and monolithic PtSi-Si Schottky-barrier detectors

1991 / IEEE
By: Turner, G.W.; Waxman, A.M.; Tsaur, B.-Y.; Chen, C.K.;

GaInAsSb-AlGaAsSb tapered lasers emitting at 2 mu m

1993 / IEEE
By: Turner, G.W.; Walpole, J.N.; Choi, H.K.; Conners, M.K.; Missaggia, L.J.; Eglash, S.J.;

High-power GaInAsSb-AlGaAsSb multiple-quantum-well diode lasers emitting at 1.9 /spl mu/m

1994 / IEEE
By: Choi, H.K.; Eglash, S.J.; Turner, G.W.;

Effect of lattice-mismatched growth on InAs/AlSb resonant-tunneling diodes

1994 / IEEE
By: Eglash, S.J.; Brown, E.R.; Calawa, D.R.; Pantano, J.V.; Parker, C.D.; Turner, G.W.;

A miniaturized ASIC-based multichannel scaler instrument

1994 / IEEE
By: Hoffheins, B.S.; McMillan, D.E.; Turner, G.W.; Ericson, M.N.; Hiller, J.M.; Todd, R.A.;

High-power, high-temperature operation of GaInAsSb-AlGaAsSb ridge-waveguide lasers emitting at 1.9 �m

1995 / IEEE
By: Fox, S.; Connors, M.K.; Turner, G.W.; Choi, H.K.; Dagenais, M.; Dauga, C.;

Progress in mid-infrared diode lasers

1993 / IEEE / 0-7803-1263-5
By: Choi, H.K.; Eglash, S.J.; Walpole, J.N.; Turner, G.W.;

Ho:YAG laser pumped by 1.9-/spl mu/m diode lasers

1995 / IEEE
By: Ochoa, J.; Nabors, C.D.; Turner, G.W.; Choi, H.K.; Sanchez, A.; Fan, T.Y.;

InAsSb/AlAsSb double-heterostructure and InAsSb/InAlAs quantum-well diode lasers emitting at /spl sim/4 /spl mu/m

1994 / IEEE / 0-7803-1754-8
By: Turner, G.W.; Choi, H.K.; Liau, Z.L.;

High-power mid-infrared semiconductor lasers

1997 / IEEE / 0-7803-3895-2
By: Choi, H.K.; Le, H.Q.; Turner, G.W.;

High-power high-efficiency quasi-CW Sb-based mid-IR lasers using 1.9-/spl mu/m laser diode pumping

1998 / IEEE
By: Turner, G.W.; Le, H.Q.; Ochoa, J.R.;

GaInAsSb-AlGaAsSb tapered lasers emitting at 2.05 �m with 0.6-W diffraction-limited power

1998 / IEEE
By: Conners, M.K.; Turner, G.W.; Walpole, J.N.; Choi, H.K.; Manfra, M.J.; Missaggia, L.J.;

Battery-powered, wireless MEMS sensors for high-sensitivity chemical and biological sensing

1999 / IEEE / 0-7695-0056-0
By: Clonts, L.G.; Rochelle, J.M.; Threatt, T.D.; Wintenberg, A.L.; Turner, G.W.; Moore, M.R.; Emery, M.S.; Ericson, M.N.; Hu, Z.; Depriest, J.C.; Bryan, W.L.; Brown, G.M.; Thundat, T.; Jones, R.L.; Oden, P.I.; Smith, S.F.; Warmack, R.J.; Britton, C.L., Jr.;

High-power high-brightness GaInAsSb-AlGaAsSb tapered laser arrays with anamorphic collimating lenses emitting at 2.05 /spl mu/m

1999 / IEEE
By: Connors, M.K.; Liau, Z.L.; Missaggia, L.G.; Choi, H.K.; Turner, G.W.; Walpole, J.N.; Cook, C.C.; Manfra, M.J.;

Mid-IR angled-grating distributed feedback (/spl alpha/-DFB) "W" lasers

2000 / IEEE / 0-7803-5947-X
By: Bewley, W.W.; Bartolo, R.E.; Turner, G.W.; Manfra, M.J.; Martinelli, R.U.; Vurgaftman, I.; Lee, H.; Yang, M.-J.; Meyer, J.R.; Jurkovic, M.J.; Felix, C.L.;

High-efficiency optically-pumped mid-IR lasers with integrated absorbers

2000 / IEEE / 0-7803-5947-X
By: Choi, H.K.; Turner, G.W.; Goyal, A.K.; Sanchez, A.; Fan, T.Y.; Manfra, M.J.; Foti, P.J.;

High-power optically pumped GaInSb/InAs quantum well lasers with GaInAsSb integrated absorber layers emitting at 4 /spl mu/m

2000 / IEEE / 1-55752-634-6
By: Turner, G.W.; Buchter, S.C.; Goyal, A.K.; Choi, H.K.; Calawa, S.D.; Manfra, M.J.;

Spectral beam combining of a broad-stripe diode laser array in an external cavity

2000 / IEEE / 1-55752-634-6
By: Choi, H.K.; Fan, T.Y.; Sanchez, A.; Daneu, V.; Cook, C.C.; Turner, G.W.;

Beam quality issues for mid-infrared angled-grating distributed feedback lasers

2001 / IEEE / 1-55752-662-1
By: Felix, C.L.; Bewley, W.W.; Jurkovic, M.J.; Bartolo, R.E.; Vurgaftman, I.; Meyer, J.R.; Manfra, M.J.; Turner, G.W.; Martinelli, R.U.; Lee, H.;

Limitations to beam quality of mid-infrared angled-grating distributed-feedback lasers

2001 / IEEE
By: Bewley, W.W.; Manfra, M.J.; Turner, G.W.; Martinelli, R.U.; Lee, H.; Vurgaftman, I.; Meyer, J.R.; Felix, C.L.; Jurkovic, M.J.; Bartolo, R.E.;

Wavelength beam combining of mid-IR semiconductor lasers

2001 / IEEE / 0-7803-7105-4
By: Foti, P.J.; Manfra, M.J.; Liau, Z.L.; Fan, T.Y.; Turner, G.W.; Missaggia, L.; Goyal, A.K.; Sanchez, A.; Daneu, J.L.; O'Brien, P.;

High-performance, aluminum-free optically-pumped mid-IR semiconductor lasers

2001 / IEEE / 0-7803-7105-4
By: Turner, G.W.; Goyal, A.K.; Sanchez, A.; O'Brien, P.; Foti, P.J.; Manfra, M.J.;

Advances in mid-IR antimonide type-II W lasers

2001 / IEEE / 0-7803-7432-0
By: Martinelli, R.U.; Leet, H.; Manfra, M.J.; Turner, G.W.; Meyer, J.R.; Felix, C.L.; Canedy, C.L.; Lindle, J.R.; Bartolo, R.E.; Vurgaftman, I.; Bewley, W.W.;

AlGaAs/InGaAs 980 nm slab-coupled semiconductor lasers with single-spatial, large diameter mode

2002 / IEEE / 0-7803-7500-9
By: Huang, R.K.; Turner, G.W.; Goodhue, W.T.; Mull, D.E.; Plant, J.; Bailey, R.J.; Harris, C.T.; Missaggia, L.J.; Walpole, J.N.; Donnelly, J.P.;

AlGaAs-InGaAs slab-coupled optical waveguide lasers

2003 / IEEE
By: Huang, R.K.; Donnelly, J.P.; Turner, G.W.; Goodhue, W.D.; Mull, D.E.; Bailey, R.J.; Plant, J.J.; Harris, C.T.; Missaggia, L.J.; Walpole, J.N.;

975-nm high brightness slab-coupled semiconductor lasers and arrays

2003 / IEEE / 0-7803-7888-1
By: Missaggia, L.J.; Huang, R.K.; Turner, G.W.; Goodhue, W.T.; Mull, D.E.; Plant, J.; Harris, C.T.; Donnelly, J.P.;

Arrays of III-V semiconductor Geiger-mode avalanche photodiodes

2003 / IEEE / 0-7803-7888-1
By: Mahoney, L.J.; Calawa, S.D.; Napoleone, A.; Oakley, D.C.; Donnelly, J.P.; Mclntosh, K.A.; Molvar, K.M.; Manfra, M.J.; Turner, G.W.; Aull, B.F.; Duerr, E.K.; Molnar, R.J.; Mahan, J.;

Electrical and thermal analysis of heat flow in /spl lambda/=2.05/spl mu/m GaInAsSb/AlGaAsSb lasers

2003 / IEEE / 1-55752-748-2
By: Pipe, K.P.; Turner, G.W.; Goyal, A.K.; Ram, R.J.;

High-power 2.1-/spl mu/m GaSb-based laser diode arrays

2004 / IEEE / 1-55752-777-6
By: Bailey, R.J.; Manfra, M.J.; Huang, R.K.; Turner, G.W.; Plant, J.J.; Bailey, L.J.;

Wavelength beam combining of slab-coupled optical waveguide laser (SCOWL) arrays

2004 / IEEE / 0-7803-8557-8
By: Sanchez-Rubio, A.; Fan, T.Y.; Donnelly, J.P.; Goyal, A.K.; Liau, Z.L.; Turner, G.W.; Harris, C.T.; Missaggia, L.J.; Huang, R.K.; Chann, B.;

High-brightness slab-coupled optical waveguide laser arrays

2005 / IEEE
By: Donnelly, J.P.; Missaggia, L.J.; Huang, R.K.; Turner, G.W.; Harris, C.T.;

TA-A5 ion-implanted, laser-annealed GaAs solar cells

1979 / IEEE
By: Fan, J.C.C.; Chapman, R.L.; Donnelly, J.P.; Turner, G.W.; Bozler, C.O.;

Recent advances in high efficiency, low-cost GaAs solar cells

1980 / IEEE
By: Bozler, C.O.; Fan, J.C.C.; Zeiger, H.J.; Turner, G.W.; Chapman, R.L.; McClelland, R.W.; Gale, R.P.;

GaAs Shallow-homojunction solar cells on Ge-coated Si substrates

1981 / IEEE
By: Gale, R.P.; Davis, F.M.; Turner, G.W.; Tsaur, B.-Y.; Fan, J.C.C.;

Effects of ionizing radiation on n-channel MOSFET's fabricated in zone-melting-recrystallized Si films on SiO2

1982 / IEEE
By: Turner, G.W.; Fan, J.C.C.; Tsaur, B-Y.; Silversmith, D.J.;

VIB-8 GaAs MESFET's and AlGaAs double-heterostructure diode lasers fabricated on monolithic GaAs/Si substrates

1984 / IEEE
By: Choi, H.K.; Windhorn, T.H.; Tsaur, B.-Y.; Metze, G.M.; Turner, G.W.; Fan, J.C.C.;

GaAs MESFET's fabricated on monolithic GaAs/Si substrates

1984 / IEEE
By: Choi, H.K.; Fan, J.C.C.; Turner, G.W.; Metze, G.M.; Tsaur, B.-Y.;

Effects of ionizing radiation on SOI/CMOS Devices fabricated in zone-melting-recrystallized Si films on SiO2

1984 / IEEE
By: Tsaur, B.-Y.; Fan, J.C.C.; Turner, G.W.; Chen, C.K.; Mountain, R.W.;

Picosecond photodetectors fabricated in GaAs layers grown on silicon and silicon-on sapphire substrates

1985 / IEEE
By: Tsaur, B-Y.; Diadiuk, V.; Metze, G.M.; Turner, G.W.; Le, H.Q.;

Monolithic integration of Si MOSFETs and GaAs MESFETs

1985 / IEEE
By: Tsaur, B.-Y.; Turner, G.W.; Choi, H.K.;

VA-5 Monolithic integration of GaAs/AlGaAs double-heterostructure LED's and Si MOSFET's

1986 / IEEE
By: Choi, H.K.; Turner, G.W.; Windhorn, T.H.; Tsaur, B.-Y.;

Monolithic integration of Si MOSFET's and GaAs MESFET's

1986 / IEEE
By: Turner, G.W.; Choi, H.K.; Bor-Yeu Tsaur;

Monolithic integration of GaAs/AlGaAs double-heterostructure LED's and Si MOSFET's

1986 / IEEE
By: Windhorn, T.H.; Turner, G.W.; Choi, H.K.; Bor-Yeu Tsaur;

Microwave MESFET's fabricated in GaAs layers grown on SOS Substrates

1987 / IEEE
By: Choi, H.K.; Turner, G.W.; Tsaur, B.-Y.;

Nanoscale selective area epitaxy: towards lithographically defined quantum dots at 1.5 /spl mu/m using direct lithographic patterning

2005 / IEEE / 0-7803-9217-5
By: Juodawlkis, P.W.; Oakley, D.C.; Rothschild, M.; Marchant, M.F.; Hardy, D.E.; Efremow, N.N.; Cann, S.G.; Swint, R.B.; Bloomstein, T.M.; Twichell, J.C.; Turner, G.W.; Chludzinski, J.W.; Vineis, C.J.; Napoleone, A.;

High-power slab coupled optical waveguide laser (SCOWL) arrays

2005 / IEEE / 1-55752-796-2
By: Donnelly, J.P.; Missaggia, L.J.; Huang, R.K.; Turner, G.W.; Harris, C.T.;

High-power near-diffraction-limited wavelength-beam-combined diode arrays

2005 / IEEE / 1-55752-795-4
By: Sanchez-Rubio, A.; Fan, T.Y.; Donnelly, J.P.; Goyal, A.K.; Liau, Z.L.; Turner, G.W.; Harris, C.T.; Missaggia, L.J.; Huang, R.K.; Chann, B.;

Quaternary InGaAsSb Thermophotovoltaic Diodes

2006 / IEEE
By: Talamo, P.; Rahner, K.D.; Depoy, D.M.; Danielson, L.R.; Nichols, G.J.; Ehsani, H.; Beausang, J.F.; Dashiell, M.W.; Luryi, S.; Belenky, G.L.; Anikeev, S.; Donetski, D.; Martinelli, R.; Jizhong Li; Taylor, G.; Shellenbarger, Z.A.; Turner, G.W.; Connors, M.K.; Huang, R.K.; Wang, C.A.; Baldasaro, P.F.; Topper, W.F.; Fourspring, P.M.; Burger, S.R.; Brown, E.J.;

High-Brightness Wavelength Beam Combined Semiconductor Laser Diode Arrays

2007 / IEEE
By: Chann, B.; Huang, R.K.; Sanchez-Rubio, A.; Fan, T.Y.; Goyal, A.K.; Turner, G.W.; Harris, C.T.; Donnelly, J.P.; Missaggia, L.J.;

High Brightness Slab-Coupled Optical Waveguide Lasers and Arrays

2007 / IEEE / 978-1-4244-0924-2
By: Missaggia, L.J.; Huang, R.K.; Turner, G.W.; Swint, R.; Donnelly, J.P.; Bien Chann;

High-power coherent beam combination of semiconductor laser arrays

2008 / IEEE / 978-1-55752-859-9
By: Chann, B.; Huang, R.K.; Turner, G.W.; Sanchez-Rubio, A.; Donnelly, J.P.; Swint, R.B.; Augst, S.J.; Missaggia, L.J.;

High-power, high-brightness wavelength-beam-combined diode arrays

2006 / IEEE / 978-1-55752-813-1
By: Liau, Z.L.; Harris, C.T.; Missaggia, L.J.; Chann, B.; Huang, R.K.; Goyal, A.K.; Sanchez-Rubio, A.; Turner, G.W.; Fan, T.Y.; Donnelly, J.P.;

Efficient infrared-to-electrical conversion with semiconductor heterojunction thermophotovoltaic devices

2006 / IEEE / 978-1-55752-813-1
By: Ram, R.J.; Huang, R.K.; Turner, G.W.; Missaggia, L.J.; Connors, M.K.; Manfra, M.J.;

Geiger-mode operation of antimonide-based avalanche photodiodes in the mid-wave infrared

2008 / IEEE / 978-1-4244-1931-9
By: Bailey, R.J.; Manfra, M.J.; Duerr, E.K.; Turner, G.W.; Donnelly, J.P.; Diagne, M.A.;

Coherently combined diode laser arrays and stacks

2009 / IEEE / 978-1-55752-869-8
By: Chann, B.; Huang, R.K.; Dorsch, F.; Miester, C.; Hostetler, J.L.; Missaggia, L.J.; Donnelly, J.P.; Sanchez-Rubio, A.; Turner, G.W.; Connors, M.K.; Augst, S.J.;

Advanced packaging of high-power Slab-Coupled Optical Waveguide laser and amplifier arrays for coherent beam combining

2010 / IEEE / 978-1-55752-890-2
By: Chann, B.; Huang, R.K.; Missaggia, L.J.; Turner, G.W.; Brattain, M.A.; Sanchez-Rubio, A.; Caissie, J.M.; Creedon, K.J.; Connors, M.K.;

Active coherent combination of >200 semiconductor amplifiers using a SPGD algorithm

2011 / IEEE / 978-1-55752-911-4
By: Creedon, K.J.; Kansky, J.E.; Redmond, S.M.; Sanchez-Rubio, A.; Missaggia, L.J.; Fan, T.Y.; Turner, G.W.; Connors, M.K.;