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Author: Tai-Bor Wu

Results

Reliability characterizations of resistive switching devices using zinc oxide thin film
2011 / IEEE / 978-1-4577-0158-0
By: Chih-Chi Chen; Tai-Bor Wu; Wen-Yuan Chang; Peng-Wei Li; Fu-Chien Chiu; Chih-Yao Huang;
Improvement in charge retention in Au-nanocrystal-based memory structures by employing (Ba0.5Sr0.5)TiO3 as control oxide
2007 / American Institute of Physics
By: Chen-Chan Wang; Chun-Sheng Liang; Jiun-Yi Tseng; Tai-Bor Wu;
Reliability properties of metal-oxide-semiconductor capacitors using HfO2 high-º dielectric
2007 / American Institute of Physics
By: Chun-Heng Chen; Ingram Yin-Ku Chang; Joseph Ya-Min Lee; Fu-Chien Chiu; Yan-Kai Chiouand; Tai-Bor Wu;
Charge storage characteristics of Au nanocrystals embedded in high-k gate dielectrics on Si
2007 / American Institute of Physics
By: Chen-Chan Wang; Jyun-Yi Wu; Yan-Kai Chiou; Che-Hao Chang; Tai-Bor Wu;
Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications
2008 / American Institute of Physics
By: Wen-Yuan Chang; Yen-Chao Lai; Tai-Bor Wu; Sea-Fue Wang; Frederick Chen; Ming-Jinn Tsai;
Bandgap engineering of tunnel oxide with multistacked layers of Al2O3/HfO2/SiO2 for Au-nanocrystal memory application
2008 / American Institute of Physics
By: Yun-Shan Lo; Ke-Chih Liu; Jyun-Yi Wu; Cheng-Hao Hou; Tai-Bor Wu;
Resistive switching characteristics in Pr0.7Ca0.3MnO3 thin films on LaNiO3-electrodized Si substrate
2009 / American Institute of Physics
By: Wen-Yuan Chang; Jeng-Hwa Liao; Yun-Shan Lo; Tai-Bor Wu;
Field enhancement effect of nanocrystals in bandgap engineering of tunnel oxide for nonvolatile memory application
2009 / American Institute of Physics
By: Yun-Shan Lo; Ke-Chih Liu; Cheng-Wei Cheng; Jyun-Yi Wu; Cheng-Hao Hou; Tai-Bor Wu;
Effect of bias stress on mechanically strained low temperature polycrystalline silicon thin film transistor on stainless steel substrate
2009 / American Institute of Physics
By: I-Hsuan Peng; Po-Tsun Liu; Tai-Bor Wu;
Improvement of resistive switching characteristics in TiO2 thin films with embedded Pt nanocrystals
2009 / American Institute of Physics
By: Wen-Yuan Chang; Kai-Jung Cheng; Jui-Ming Tsai; Hung-Jen Chen; Frederick Chen; Ming-Jinn Tsai; Tai-Bor Wu;
Resistive switching behaviors of ZnO nanorod layers
2010 / American Institute of Physics
By: Wen-Yuan Chang; Chin-An Lin; Jr-Hau He; Tai-Bor Wu;
Influences of surface reconstruction on the atomic-layer-deposited HfO2/Al2O3/n-InAs metal-oxide-semiconductor capacitors
2011 / American Institute of Physics
By: Hau-Yu Lin; San-Lein Wu; Chao-Ching Cheng; Chih-Hsin Ko; Clement H. Wann; You-Ru Lin; Shoou-Jinn Chang; Tai-Bor Wu;
Surface plasmon-enhanced emission from Ag-coated Ce doped Y3Al5O12 thin films phosphor capped with a dielectric layer of SiO2
2010 / American Institute of Physics
By: Wen-Hsuan Chao; Ren-Jye Wu; Chih-Song Tsai; Tai-Bor Wu;
Charging characteristics of Au nanocrystals embedded in metal-oxide-semiconductor structures
2006 / American Institute of Physics
By: Chen-Chan Wang; Jiun-Yi Tseng; Tai-Bor Wu; Lin-Jung Wu; Chun-Sheng Liang; Jenn-Ming Wu;
Enhanced deposition and dielectric property of Ta/sub 2/O/sub 5/ thin films on a rugged PtO electrode
2003 / IEEE
By: Wei-Pang Huang; Tzu-Ping Liu; Tai-Bor Wu;
Low-temperature capacitor-over-interconnect (COI) Modular FeRAM for SOC application
2004 / IEEE
By: Lee, H.Y.; Lai, S.C.; Hsiang-Lan Lung; Chih-Yuan Lu; Liu, R.; Tai-Bor Wu;
Mechanism for slow switching effect in advanced low-voltage, high-speed Pb(Zr/sub 1-x/Ti/sub x/)O/sub 3/ ferroelectric memory
2005 / IEEE
By: Ching-Wei Tsai; Chih-Yuan Lu; Rich Liu; Tahui Wang; Tai-Bor Wu; Hsiang-Lan Lung; Hao-Ming Lien; Yen, C.T.; Sheng-Chih Lai;
A Study on the Erase and Retention Mechanisms for MONOS, MANOS, and BE-SONOS Non-Volatile Memory Devices
2007 / IEEE / 1-4244-0584-X
By: Chia-Wei Wu; Yan-Kai Chiou; Sheng-Chih Lai; Ming-Jui Yang; Jung-Yu Hsieh; Hang-Ting Luea; Tai-Bor Wu; Chih-Yuan Lu; Rich Liu; Kuang-Yeu Hsieh; Erh-Kun Lai; Chao-Hsin Chien; Guang-Li Luo;
Study of the Erase Mechanism of MANOS ($ \hbox{Metal/Al}_{2}\hbox{O}_{3}/\hbox{SiN/SiO}_{2}/\hbox{Si}$) Device
2007 / IEEE
By: Erh-Kun Lai; Yan-Kai Chiou; Chao-Hsin Chien; Guang-Li Luo; Tai-Bor Wu; Chia-Wei Wu; Kuang-Yeu Hsieh; Ming-Jui Yang; Jong-Yu Hsieh; Hang-Ting Lue; Sheng-Chih Lai; Chih-Yuan Lu; Rich Liu;
MA BE-SONOS: A Bandgap Engineered SONOS using Metal Gate and Al2O3 Blocking Layer to Overcome Erase Saturation
2007 / IEEE / 1-4244-0752-4
By: Hang-Ting Lue; Sheng-Chih Lai; Chin-Yuan Lu; Liu, R.; Kuang-Yeu Hsieh; Jung-Yu Hsieh; Ming-Jui Yang; Chao-Hsin Chien; Guang-Li Luo; Tai-Bor Wu; Szu-Yu Wang; Erh-Kun Lai;
Highly Reliable MA BE-SONOS (Metal-Al2O3 Bandgap Engineered SONOS) Using a SiO2 Buffer Layer
2008 / IEEE / 978-1-4244-1614-1
By: Chien-Wei Liao; Hang-Ting Lue; Sheng-Chih Lai; Chih-Yuan Lu; Rich Liu; Kuang-Yeu Hsieh; Tai-Bor Wu; Chao-Hsin Chien; Guang-Li Luo; Szu-Yu Wang; Jung-Yu Hsieh; Yi-Hsien Lue; Ming-Jui Yang;
An Oxide-Buffered BE-MANOS Charge-Trapping Device and the Role of Al2O3
2008 / IEEE / 978-1-4244-1547-2
By: Ming-Jui Yang; Yi-Hsien Lue; Yu-Fong Huang; Chien-Wei Liao; Hang-Ting Lue; Sheng-Chih Lai; Chili-Yuan Lu; Liu, R.; Kuang-Yeu Hsieh; Chao-Hsin Chien; Guang-Li Luo; Chili-Yen Shen; Fang-Hao Hsu; Shih-Ping Hong; Szu-Yu Wang; Jung-Yu Hsieh; Tai-Bor Wu;
Ultrathin HfON Trapping Layer for Charge-Trap Memory Made by Atomic Layer Deposition
2010 / IEEE
By: Tai-Bor Wu; Ming-Ho Lin; Yen-Ting Chen; Jyun-Yi Wu;
Single-ZnO-Nanowire Memory
2011 / IEEE
By: Jr-Hau He; Tai-Bor Wu; Su-Jien Lin; Chih-Hsiang Ho; Yen-De Chiang; Cheng-Ying Chen; Ching-Yuan Ho; Wen-Yuan Chang;

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